Showing papers on "Indium tin oxide published in 1988"
TL;DR: In this paper, a thin-film indium-tin oxide (ITO) NO2 sensor has been fabricated by radio frequency magnetron sputtering (RFMS) from a target of a mixture of In2O3 and SnO2 in the proportion 9:1 by weight.
75 citations
Patent•
14 Jul 1988TL;DR: A TFEL device having improved contrast is a laminate having a phosphor layer sandwiched between front and rear insulating layers placed upon a substrate supporting a set of front transparent electrodes.
Abstract: A TFEL device having improved contrast includes a laminate having a phosphor layer sandwiched between front and rear insulating layers placed upon a substrate supporting a set of front transparent electrodes. The rear set of electrodes are transparent or semitransparent so as not to reflect ambient light toward the viewer. The TFEL laminate is contained within a cavity created by an enclosure secured to the substrate by an adhesive. Darkly dyed filler material is injected into the cavity whose rear inside wall may have a dark coating. The semitransparent electrodes may be made of gold or may be made of transparent indium tin oxide having narrow aluminum bus bars for improved conductivity.
61 citations
TL;DR: In this article, the effects of varying the oxygen partial pressure on the optical, electrical and structural properties of indium oxide films were investigated, and the films showed a b.c.c structure with a 0 = 1.0118 nm and a preferred orientation along the 〈400〉 axis.
54 citations
TL;DR: In this article, the authors used a target composition of 95 wt. % In2O3-5-5 wt., SnO2 for low-temperature indium tin oxide (ITO) films.
Abstract: Indium tin oxide (ITO) films were prepared with relatively high deposition rate by rf magnetron sputtering under an applied external dc magnetic field. The films with resistivity as low as 2×10−4 Ω cm and average transmittance above 85% at wavelengths between 400 and 800 nm were able to form on the substrates at temperatures below 140 °C by using a target composition of 95 wt. % In2O3–5 wt. % SnO2. The characteristic features of the ITO films deposited on low‐temperature substrates were their high carrier concentration and relatively low mobility. It was found that the use of a 95 wt. % In2O3–5 wt. % SnO2 target is better than that of a 90 wt. % In2O3–10 wt. % SnO2 target for deposition on low‐temperature substrates, while the use of a 90 wt. % In2O3–10 wt. % SnO2 is desirable for deposition on substrates of high temperatures, about 350 °C. It was also found that the resistivity of the ITO films deposited on low‐temperature substrates can be lowered by heat treatment at 400 °C in either a vacuum or nitrog...
53 citations
TL;DR: In this paper, the effect of surface etching and stoichiometry on the properties of Schottky barriers and heterojunctions with CdS and indium tin oxide (ITO) formed on p-type CdTe crystal is reviewed.
50 citations
TL;DR: In this paper, the authors showed that trace impurities can have significant effects on the behavior of the cells and could be responsible for the aging behavior of CdS/CdTe solar cells.
49 citations
TL;DR: Variations in structural and electrical properties of magnetron-sputtered indium tin oxide films with deposition parameters are discussed in this paper, where the authors present a detailed discussion of the properties of these films.
46 citations
TL;DR: In this paper, a 1 thin film was prepared on an indium tin oxide (ITO) electrode by the controlledpotential electrolysis of this solution, which consisted of rod-like crystals of 500 nm in length.
Abstract: Phthalocyanine (1) was dissolved to the micellar solution formed by non-ionic surfactants with ferrocenyl moiety. A 1 thin film was prepared on an indium tin oxide (ITO) electrode by the controlled-potential electrolysis of this solution. This film consisted of rod-like crystals of 500 nm in length.
44 citations
TL;DR: Tin-doped indium oxide (ITO) films were prepared by the metallo-organic decomposition process to have nominal composition In1.91Sn0.09O3 as discussed by the authors.
43 citations
TL;DR: In this paper, a single-phase SnO2 film was found to have an energy gap of 3.5 eV and spectroscopic ellipsometry measurements indicated the refractive index lobe typically between 1.8-1.9 over the wavelength range of 400-800 nm.
Abstract: Thin films of SnO2−x (0
39 citations
TL;DR: The active electronic barrier approach is a generic methodology to inhibit corrosion, and it can be realized using other semiconductor/insulator combinations including semiconducting polymer coatings.
Abstract: Semiconductor and insulator coatings, appropriately configured in Metal-Semiconductor (MS) and Metal-Insulator (≈20–100A)-Semiconductor (MIS) structural formats, are shown to result in the formation of a built-in active electronic barrier on metal surfaces. This interfacial electronic barrier impedes the transfer of electrons from the metal to oxidizing species present at the metal surface, thereby providing protection against corrosion. The effectiveness of the electronic barrier concept has been confirmed using weight-loss, and cathodic and anodic polarization measurements on aluminum samples coated with indium tin oxide ITO (semiconductor) and SiO2 (thin oxide/insulator) films. In particular, Al-ITO, Al-ITO-Si3N4, Al-SiO2-ITO, and Al-SiO2-ITO-Si3N4 structures were fabricated and tested in a 1% NaCl, pH-2 solution. The films were grown using chemical vapor deposition (CVD) and spray techniques to ensure high quality and reproducibility. Aluminum samples tested included commercial purity, high purity (polycrystalline and single crystalline), and alloy (7075-T6). The MS and MIS configurations were found to provide superior corrosion protection as compared to conventional insulating films (e.g., Al-Si3N4). The active electronic barrier approach is a generic methodology to inhibit corrosion, and it can be realized using other semiconductor/insulator combinations including semiconducting polymer coatings.
TL;DR: In this paper, the authors measured the optical properties of polycrystalline thin films with a wide range of indium concentrations (10 17 −10 21 cm −3 ) in the visible and near-infrared regions.
TL;DR: Transparent conductive indium-tin oxide thin films were obtained by thermal decomposition of metallic complex salts as mentioned in this paper, which achieved high transparency and low electric resistivity (4.23×10-4 Ωcm).
Abstract: Transparent conductive indium-tin oxide thin films were prepared by thermal decomposition of metallic complex salts. The films of high transparency and low electric resistivity (4.23×10-4 Ωcm) were obtained by dip coating glass substrates with raw-material solution followed by heating at 500°C for 20 min in an inert atmosphere.
Patent•
09 Dec 1988
TL;DR: In this article, the leads are plated with tin or a tin alloy and then with indium, with or without heat treatment at 50°-150° C. to form an indium diffusion layer in the tin or tin alloy coating.
Abstract: Film carriers for mounting electronic components such as semiconductor chips thereon have lead portions plated with a tin or tin alloy layer and further with an indium layer. The tin or tin alloy layer is 0.1-3 μm thick and the indium layer 0.01-2 μm thick. Alternatively, the leads have a tin or tin alloy plated portion having an indium diffusion layer, with an indium content of 0.2-50 wt %. The carriers are manufactured by a method which comprises plating the leads with tin or a tin alloy and then with indium, with or without heat treatment at 50°-150° C. to form an indium diffusion layer in the tin or tin alloy coating. Plating is done by electroless plating.
TL;DR: In this article, the dark and photoconductivity characteristics of a thin crystalline film of epindolidione, sandwiched between indium tin oxide coated glass and indium, have been investigated.
TL;DR: In this paper, a good correlation was found between the area intensities of a doublet and a singlet and the ratios of acid-soluble Sn(IV) to acid-insoluble SnO2.
Abstract: ITO films and powders, prepared by several methods, were characterized by conversion electron and transmission Mossbauer spectrometry (CEMS and TMS). The slight change of FWHM of Sn(IV), observed in ITO films, was attributed to the presence of the acid-insoluble segregated SnO2 and the acid-soluble Sn(IV) that is incorporated in the In2O3 lattice. A good correlation was found between the area intensities of a doublet and a singlet and the ratios of acid-soluble Sn(IV) to acid-insoluble Sn(IV). The peaks of acid-soluble Sn(IV) in ITO were deconvoluted to two doublets corresponding to different sites. The results suggested that Sn(IV) atoms were preferentially substituted to the centers of trigonally distorted octahedra (site b) rather than to the centers of more distorted octahedra (site d).
TL;DR: In this paper, high quality indium tin oxide (ITO) films were deposited onto Pyrex glass substrates by vacuum evaporation from an annealing boat closed by an apertured cover, and the effect of the deposition parameters on the electrical and optical properties of the films has been studied.
Patent•
26 Aug 1988
TL;DR: In this article, a method of forming a textured layer of tin oxide on a vitreous substrate in which the thickness and degree of texture of the layer can be controlled independently of one another was proposed.
Abstract: A method of forming a textured layer of tin oxide on a vitreous substrate in which the thickness and degree of texture of the layer can be controlled independently of one another. The method comprises the steps of depositing a first film of tin oxide on the substrate by chemical vapor deposition from a first reactant mixture of tin chloride, water, and an alcohol and depositing a second film of tin oxide on the first tin oxide film by chemical vapor deposition from a second reactant mixture of tin chloride and water. Where the substrate is ordinary soda lime glass, it preferably is first coated with a film of silicon dioxide. The method permits deposition of substantially uniform layers of tin oxide in a continuous deposition process.
Patent•
22 Dec 1988TL;DR: In this paper, a pattern of thin indium tin oxide films was obtained by subjecting these films to a patterned reactive ion etching in an atmosphere consisting of disassociated argon.
Abstract: Precise patterns of thin indium tin oxide films deposited on a substrate are obtained by subjecting these films to a patterned reactive ion etching in an atmosphere consisting of disassociated argon. Line widths and spacings in the order as little as 2-4µm or less may be readily produced.
TL;DR: In this article, annealing of ITO-coated substrates at a temperature of about 500-700 K for some 70 min in vacuum at 5 × 10 −3 Pa caused the layers to crystallize.
TL;DR: In this paper, a dc magnetron deposition of the ITO into single-crystal InP substrates has been used to construct efficient solar cells of indium tin oxide (ITO)/InP. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction.
Abstract: Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.
TL;DR: In this paper, electrical and optical properties of indium tin oxide films coated on soda-lime glass substrates have been investigated as a function of substrate temperature (Ts=250-450 °C).
Abstract: Electrical and optical properties of indium tin oxide films coated on soda-lime glass substrates have been investigated as a function of substrate temperature (Ts=250–450 °C). Highly conducting (ϱ≈8 x 10−4 Ω cm) and transparent (T≈90%) films have been obtained at a substrate temperature of 350°C and above. An increase in carrier concentration accompanied by a widening in optical band gap (the Burstein-Moss shift) have been observed with increasing substrate temperature. Enhancement of carrier concentration at higher substrate temperatures may be attributed to the presence of higher valency states of tin (Sn4+) occupying the indium sublattice of indium oxide.
TL;DR: In this paper, the electrochromic properties of tungsten oxide thin films were investigated in acid electrolyte by simultaneous measurements of the electrical and optical parameters and voltammetry was used to characterize the films from an electrical point of view.
Abstract: Electrochromic tungsten oxide thin films, obtained by vacuum evaporation, were studied before and after heat treatment between 25 and 250°C for 2 h in air. Electrochromic properties were investigated in acid electrolyte by simultaneous measurements of the electrical and optical parameters. A.c. complex impedance techniques and voltammetry were used to characterize the films from an electrical point of view. We observed an enhancement of the electrochromic response times during both coloration and bleaching after heat treatment carried out between 150 and 220°C. This phenomenon was associated with a decrease of the ohmic drop in the electrode and a continuous variation of the impedance diagrams of these electrochromic electrodes. Moreover, we observed that the diffusion coefficient of H+ ions into WO3, obtained on colored thin films, increased as the electrochromic kinetics increased.
TL;DR: In this paper, the ionization potential and work function of zcrylonitrile thin films have been measured using a low energy electron gun in an ultrahigh vacuum system, and the optical absorption and electrical resistivity were also measured as a function of pyrolization temperature and doping.
TL;DR: In this article, photoelectrochemical characteristics of a metal-free phthalocyanine electrode prepared by a micelle disruption method are described, which provides more photoactive PH-yanine layers on indium tin oxide (ITO), compared with a vacuum sublimation technique.
Abstract: Photoelectrochemical characteristics of a metal‐free phthalocyanine electrode prepared by a micelle disruption method are described. The novel technique is found to provide more photoactive phthalocyanine layers on indium tin oxide (ITO), compared with a vacuum sublimation technique. A short‐circuit photocurrent of 0.1 mA cm−2 is obtained for the ITO/H2 Pc(MD)/I−3 ‐I−/Pt cell under the white light illumination of 6 mW cm−2, together with an open‐circuit photovoltage of 70 mV and a fill factor of 0.42. These data lead to a value of 0.06% for the energy conversion efficiency.
TL;DR: The forward I-V characteristic of a Schottky diode is strongly affected by the series resistance and at low barriers and high resistances it is difficult to determine the diode parameters as mentioned in this paper.
Abstract: The forward I–V characteristic of a Schottky diode is strongly affected by the series resistance. At low barriers and high resistances it is difficult to determine the diode parameters. I–V measurements at extremly low voltages enable the barrier height to be derived. In the case of indium tin oxide or palladium on a-Si:H, consistent results were obtained.
TL;DR: The plasma polymerization of TCNQ and TCNE was carried out at 13.56 MHz from the gas phase and semiconductive polymeric films were obtained as mentioned in this paper, and the electrical conductivities of the films obtained ranged from 10−10 to 10−6 S 1 cm−1 and the Al/polymer/ITO (indium tin oxide) sandwich cells made from the films showed rectifying behavior and photovoltaic response.
Abstract: The plasma polymerization of TCNQ (tetracyanoquinodimethane) and TCNE (tetracyanoethylene) was carried out at 13.56 MHz from the gas phase and semiconductive polymeric films were obtained. The electrical conductivities of the films obtained ranged from 10−10 to 10−6 S cm−1 and the Al/polymer/ITO (indium tin oxide) sandwich cells made from the films showed rectifying behavior and photovoltaic response. Photoconductivity was also observed in the films. Infrared spectroscopy, ultraviolet spectroscopy, and x‐ray photoelectron spectroscopy were utilized to characterize the structure, and these results as well as those from electrical measurements confirmed that a certain conjugation structure when the π electrons delocalized have been formed in the films. The influence of plasma polymerization conditions on the structure and electrical properties of films is also discussed.
TL;DR: Indium tin oxide (ITO) films have been prepared by sequential deposition of indium and tin followed by oxidation at different temperatures in the range 500-650 °C in atmospheric oxygen as mentioned in this paper.
Abstract: Indium tin oxide (ITO) films have been prepared by sequential deposition of indium and tin followed by oxidation at different temperatures in the range 500–650 °C in atmospheric oxygen. The amount of indium deposited was maintained constant throughout and only the concentration of the tin dopant was varied in the range 0.05–0.4% by weight. The characteristic feature of the films is the higher carrier density (6 ×1020 cm−3), high conductivity (2.9×10 3 Ω −1 cm −1 ) and high mobility (30 cm2 V−1 −1) for a tin concentration of 0.19% by weight. These polycrystalline films show highly preferred orientation. A slight increase in sheet resistance occurs on aging at ambient atmosphere for about three days. Optical transmission spectra of the films indicate very high transmission (of about 80%) in the visible region.