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Anabela Veloso
Researcher at Katholieke Universiteit Leuven
Publications - 190
Citations - 2175
Anabela Veloso is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: CMOS & Metal gate. The author has an hindex of 22, co-authored 164 publications receiving 1794 citations.
Papers
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Proceedings ArticleDOI
Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Aude Rothschild,X. Shi,J.-L. Everaert,Christoph Kerner,Thomas Chiarella,T. Y. Hoffmann,Christa Vrancken,A. Shickova,H. Yoshinao,R. Mitsuhashi,Masaaki Niwa,Anne Lauwers,Anabela Veloso,Jorge A. Kittl,Philippe Absil,Serge Biesemans +15 more
TL;DR: In this paper, the nitrogen content of the HfSiON gate dielectric was optimized to be 3-6 to achieve a 20%/2% device improvement enabling 10% power delay improvement compared to the previous report.
Journal ArticleDOI
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices
Carlos H. S. Coelho,Joao Antonio Martino,Marcello Bellodi,Eddy Simoen,Anabela Veloso,Paula Ghedini Der Agopian,Paula Ghedini Der Agopian +6 more
TL;DR: In this paper, an experimental study of the zero-temperature coefficient (ZTC) bias point of vertically stacked gate-all-around (GAA) double nanosheet nMOS devices operating in linear and saturation regions is presented.
Proceedings ArticleDOI
On quantum effects and low frequency noise spectroscopy in Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
TL;DR: In this paper, DC and low frequency noise have been investigated in Gate-All-Around Nanowire MOSFETs at very low temperatures, and the mobility and subthreshold swing are also investigated.
Journal Article
Challenges in scaling of CMOS devices towards 65 nm node
Malgorzata Jurczak,Anabela Veloso,Rita Rooyackers,Emmanuel Augendre,Sofie Mertens,A. Rotschild,M. Scaekers,Richard Lindsay,Anne Lauwers,Kirklen Henson,Simone Severi,Ivan Pollentier,A. Keersgieter de +12 more
TL;DR: It is becoming increasingly difficult to continue scaling in traditional way due to fundamental limitations like resolution, quantum effects or random fluctuations, which has an important impact on electrical device specifications especially leakage current and the circuit.
Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications
Jorge A. Kittl,Anne Lauwers,Malgorzata Kmieciak,Caroline Demeurisse,Anil Kottantharayil,Anabela Veloso,Mark Van Dal,Tom Schram,Bert Brijs,Monja Kaiser,Stefan Kubicek,J. Cunniffe,Rita Verbeeck,Christa Vrancken,Serge Biesemans,Karen Maex +15 more