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C. Betancourt

Researcher at University of California, Santa Cruz

Publications -  19
Citations -  288

C. Betancourt is an academic researcher from University of California, Santa Cruz. The author has contributed to research in topics: Silicon & Capacitance. The author has an hindex of 9, co-authored 19 publications receiving 281 citations. Previous affiliations of C. Betancourt include Santa Cruz Institute for Particle Physics.

Papers
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Development of n-on-p silicon sensors for very high radiation environments

Yoshinobu Unno, +73 more
TL;DR: In this article, the authors developed a highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider.
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Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

TL;DR: In this article, the authors developed n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility.
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Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

TL;DR: In this paper, the authors developed n+inp, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment.
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Silicon detectors for the sLHC

A. A. Affolder, +259 more
TL;DR: In this paper, the authors present an improved understanding of the macroscopic changes of the effective doping concentration based on identification of individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.
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Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

TL;DR: In this article, the authors presented results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics and verified in detail that the sensors comply with the technical specifications required before irradiation.