scispace - formally typeset
G

G. Lindström

Researcher at University of Hamburg

Publications -  93
Citations -  3827

G. Lindström is an academic researcher from University of Hamburg. The author has contributed to research in topics: Silicon & Semiconductor detector. The author has an hindex of 34, co-authored 86 publications receiving 3680 citations.

Papers
More filters
Journal ArticleDOI

Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

G. Lindström, +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Journal ArticleDOI

Radiation hardness of silicon detectors — a challenge from high-energy physics

TL;DR: An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given in this article, where possible ways are outlined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

ATLAS: Technical proposal for a general-purpose p p experiment at the Large Hadron Collider at CERN

W.W. Armstrong, +1496 more
Journal ArticleDOI

Radiation damage in silicon detectors

TL;DR: In this article, the radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects, both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered.
Journal ArticleDOI

Leakage current of hadron irradiated silicon detectors - material dependence

TL;DR: In this article, the leakage current increase of silicon detectors irradiated with fast neutrons was measured in the fluence range from 10 11 to 10 15 ǫ −2 for a wide range of different starting material.