Ioana Pintilie

TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.

TL;DR: It is demonstrated that iodine is dislocated by the electric field between the electrodes, and this is an intrinsic cause for electromigration of I- from the perovskite until it reaches the anode, and AgI is formed.

TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.

TL;DR: In this paper, a detailed relation between the microscopic reasons based on defect analysis and their macroscopic consequences for the degradation of silicon detector performance is presented, and it is shown that the changes in the Si device properties (depletion voltage and leakage current) after exposure to high levels of 60 Co-γ doses can be completely understood by the microscopically investigated formation of two point defects, a deep acceptor and a shallow donor, both depending strongly on the oxygen concentration in the silicon bulk.

TL;DR: In this article, as-grown 4H-SiC epitaxial layers were investigated by deep-level transient spectroscopy to study the formation of the well-known Z1,2 defect with energy levels normally detected at about EC−0.7