Journal ArticleDOI
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
Kazuhiko Hara,A. A. Affolder,Phillip Allport,Richard Bates,C. Betancourt,J. Bohm,H. Brown,Craig Buttar,J. R. Carter,Gianluigi Casse,H. S. Chen,A. Chilingarov,Vladimir Cindro,A. G. Clark,Noel Dawson,B. DeWilde,F. Doherty,Zdenek Dolezal,Lars Eklund,Vitaliy Fadeyev,Didier Ferrere,Harald Fox,Richard French,Carmen García,M. Gerling,S. Gonzalez Sevilla,I. V. Gorelov,A. Greenall,Alexander Grillo,N. Hamasaki,H. Hatano,Martin Hoeferkamp,L.B.A. Hommels,Yoichi Ikegami,Karl Jakobs,J.A. Kierstead,Peter Kodys,M. Köhler,T. Kohriki,Gregor Kramberger,Carlos Lacasta,Z. Li,S. Lindgren,David Lynn,P. Maddock,Igor Mandić,F. Martinez-McKinney,S. Marti i Garcia,R. Maunu,R. L. McCarthy,Jessica Metcalfe,Marcela Mikestikova,M. Mikuž,M. Miñano,S. Mitsui,Val O'Shea,U. Parzefall,Hartmut Sadrozinski,D. Schamberger,A. Seiden,Susumu Terada,S. Paganis,Dave Robinson,D. Puldon,S. Sattari,Sally Seidel,Y. Takahashi,Konstantin Toms,D. Tsionou,Yoshinobu Unno,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada +73 more
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TLDR
In this article, the authors developed n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility.Abstract:
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.read more
Citations
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Journal ArticleDOI
Displacement Damage Effects in Irradiated Semiconductor Devices
J.R. Srour,James W. Palko +1 more
TL;DR: A review of radiation-induced displacement damage effects in semiconductor devices is presented in this paper, with emphasis placed on silicon technology, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells.
Journal ArticleDOI
Development of n-on-p silicon sensors for very high radiation environments
Yoshinobu Unno,A. A. Affolder,Phillip Allport,Richard Bates,C. Betancourt,J. Bohm,H. Brown,Craig Buttar,J. R. Carter,Gianluigi Casse,H. S. Chen,A. Chilingarov,Vladimir Cindro,A. G. Clark,Noel Dawson,B. DeWilde,Zdenek Dolezal,Lars Eklund,Vitaliy Fadeyev,Didier Ferrere,Harald Fox,Richard French,Carmen García,M. Gerling,S. Gonzalez Sevilla,I. V. Gorelov,A. Greenall,Alexander Grillo,N. Hamasaki,Kazuhiko Hara,H. Hatano,Martin Hoeferkamp,L.B.A. Hommels,Yoichi Ikegami,Karl Jakobs,S. Kamada,J.A. Kierstead,Peter Kodys,M. Köhler,T. Kohriki,Gregor Kramberger,Carlos Lacasta,Z. Li,S. Lindgren,David Lynn,Marcela Mikestikova,P. Maddock,Igor Mandić,S. Marti i Garcia,F. Martinez-Mckinney,R. Maunu,R. L. McCarthy,Jessica Metcalfe,Marko Mikuz,M. Miñano,S. Mitsui,Val O'Shea,S. Paganis,U. Parzefall,D. Puldon,Dave Robinson,Hartmut Sadrozinski,S. Sattari,D. Schamberger,Sally Seidel,Abraham Seiden,Susumu Terada,Konstantin Toms,D. Tsionou,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada,Kazuhisa Yamamura +73 more
TL;DR: In this article, the authors developed a highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider.
Journal ArticleDOI
Development of n + -in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results
Yoshinobu Unno,S. Edwards,S. Pyatt,J. P. Thomas,J. A. Wilson,J.A. Kierstead,David Lynn,J. R. Carter,L. B. A. H. Hommels,David Robinson,Ingo Bloch,I. M. Gregor,Kerstin Tackmann,Christopher Betancourt,Karl Jakobs,Susanne Kuehn,R. Mori,Ulrich Parzefall,L. Wiik-Fucks,A. G. Clark,Didier Ferrere,S. Gonzalez Sevilla,J. Ashby,Andrew Blue,Richard Bates,C. Buttar,F. Doherty,Lars Eklund,T. McMullen,F. McEwan,V. O׳Shea,S. Kamada,Kazuhisa Yamamura,Yoichi Ikegami,Koji Nakamura,Yosuke Takubo,R. Nishimura,Ryuichi Takashima,A. Chilingarov,Harald Fox,A. A. Affolder,P. P. Allport,Gianluigi Casse,Paul Dervan,D. Forshaw,A. Greenall,S. Wonsak,M. Wormald,Vladimir Cindro,Gregor Kramberger,Igor Mandić,Marko Mikuz,I. V. Gorelov,Martin Hoeferkamp,Prabhakar Palni,Sally Seidel,A. C. Taylor,Konstantin Toms,Rui Wang,Nigel Hessey,Nika Valencic,Y. Arai,Kazunori Hanagaki,Zdenek Dolezal,Peter Kodys,J. Bohm,Marcela Mikestikova,Adrian John Bevan,G. A. Beck,S. Ely,Vitaliy Fadeyev,Z. Galloway,Alexander Grillo,F. Martinez-McKinney,J. Ngo,C. Parker,H. F.W. Sadrozinski,D. Schumacher,A. Seiden,Richard French,Paul Hodgson,Hector Marin-Reyes,Kerry Ann Parker,S. Paganis,Osamu Jinnouchi,Kazuki Motohashi,Kazuki Todome,Dean T. Yamaguchi,Kazuhiko Hara,Mutsuto Hagihara,Carmen García,J. Jimenez,Carlos Lacasta,S. Marti i Garcia,U. Soldevila +94 more
TL;DR: In this paper, the authors have developed a novel radiation-tolerant n+in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider.
Journal ArticleDOI
Alumina and silicon oxide/nitride sidewall passivation for P- and N-type sensors
Marc Christophersen,Vitaliy Fadeyev,Bernard F. Phlips,Hartmut Sadrozinski,C. Parker,S. Ely,J.G. Wright +6 more
TL;DR: In this paper, a "scribe, cleave, and passivate" (SCP) technique was described for the fabrication of slim edges in a post processing with finished detectors.
Journal ArticleDOI
Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment
S. Lindgren,A. A. Affolder,Phillip Allport,Richard Bates,C. Betancourt,J. Bohm,H. Brown,Craig Buttar,J. R. Carter,Gianluigi Casse,H. S. Chen,A. Chilingarov,Vladimir Cindro,A. G. Clark,Noel Dawson,B. DeWilde,F. Doherty,Zdenek Dolezal,Lars Eklund,Vitaliy Fadeyev,D. Ferrèrre,Harald Fox,Richard French,Carmen García,M. Gerling,S. Gonzalez Sevilla,I. V. Gorelov,A. Greenall,Alexander Grillo,N. Hamasaki,Kazuhiko Hara,H. Hatano,Martin Hoeferkamp,L.B.A. Hommels,Yoichi Ikegami,Karl Jakobs,J.A. Kierstead,Peter Kodys,M. Köhler,T. Kohriki,Gregor Kramberger,Carlos Lacasta,Z. Li,David Lynn,P. Maddock,Igor Mandić,F. Martinez-McKinney,S.Martíi Garcia,R. Maunu,R. L. McCarthy,Jessica Metcalfe,Marcela Mikestikova,M. Mikuž,M. Miñano,S. Mitsui,Val O'Shea,U. Parzefall,Hartmut Sadrozinski,D. Schamberger,A. Seiden,Susumu Terada,S. Paganis,Dave Robinson,D. Puldon,S. Sattari,Sally Seidel,Konstantin Toms,D. Tsionou,Yoshinobu Unno,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada +72 more
TL;DR: In this paper, the authors developed n+inp, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment.
References
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G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,E. Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,Claude Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,Gerhard Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Mikuž,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kristine M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,Spyros Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Žontar +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Journal ArticleDOI
SCTA-a rad-hard BiCMOS analogue readout ASIC for the ATLAS semiconductor tracker
Francis Anghinolfi,Wladyslaw Dabrowski,E. Delagnes,J. Kaplon,U. Koetz,Pierre Jarron,F. Lugiez,Christoph Posch,Shaun Roe,P. Weilhammer +9 more
TL;DR: In this paper, two prototype chips for the analogue readout of silicon strip detectors in the ATLAS Semiconductor Tracker (SCT) have been designed and manufactured, in 32 channels and 128 channel versions, using the radiation hard BiCMOS DMILL process.
Journal ArticleDOI
Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors
TL;DR: In this paper, a comparison of MESA and planar pad detectors showed a 20-30% lower FDV for the MESA compared to planar detectors, in the range from 2×10 8 to 5×10 15 ǫn/cm 2 s.
The Beetle Reference Manual
N. van Bakel,M. Schmelling,N. Harnew,Nigel Smale,J. F. J. van den Brand,E. Sexauer,S. Löchner,H. Verkooijen,Werner Hofmann,K-T Knöpfle,D. Baumeister,U. Trunk,M Feuerstack-Raible +12 more
TL;DR: The Beetle 1.1 readout chip as mentioned in this paper was developed for the LHCb experiment and fulfils the requirements of the silicon vertex detector (VELO, PUS 1 ), the silicon tracker and the RICH detectors in case of multi-anode photomultiplier readout.
Journal ArticleDOI
Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment
J. Bohm,Marcela Mikestikova,A. A. Affolder,Phillip Allport,Richard Bates,C. Betancourt,H. Brown,Craig Buttar,J. R. Carter,Gianluigi Casse,H. S. Chen,A. Chilingarov,Vladimir Cindro,A. G. Clark,Noel Dawson,B. DeWilde,F. Doherty,Zdenek Dolezal,Lars Eklund,Vitaliy Fadeyev,Didier Ferrere,Harald Fox,Richard French,Carmen García,M. Gerling,S. Gonzalez Sevilla,I. V. Gorelov,A. Greenall,Alexander Grillo,Kazuhiko Hara,H. Hatano,Martin Hoeferkamp,L.B.A. Hommels,Yoichi Ikegami,Karl Jakobs,J.A. Kierstead,Peter Kodys,M. Köhler,T. Kohriki,G. Krambergen,Carlos Lacasta,Z. Li,S. Lindgren,David Lynn,P. Maddock,Igor Mandić,S. Marti i Garcia,F. Martinez-McKinney,R. Maunu,R. L. McCarthy,Jessica Metcalfe,Marko Mikuz,M. Miñano,S. Mitsui,Val O'Shea,S. Paganis,U. Parzefall,D. Puldon,Dave Robinson,Hartmut Sadrozinski,S. Sattari,D. Schamberger,Sally Seidel,A. Seiden,U. Soldevila,Susumu Terada,Konstantin Toms,D. Tsionou,Yoshinobu Unno,J. Von Wilpert,M. Wormald,J. Wright,M. Yamada +72 more
TL;DR: In this article, the authors presented results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics and verified in detail that the sensors comply with the technical specifications required before irradiation.
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