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Carl V. Thompson
Researcher at Massachusetts Institute of Technology
Publications - 422
Citations - 22680
Carl V. Thompson is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Thin film & Grain growth. The author has an hindex of 77, co-authored 416 publications receiving 21156 citations. Previous affiliations of Carl V. Thompson include Max Planck Society & Harvard University.
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Anisotropic edge retraction and hole growth during solid-state dewetting of single crystal nickel thin films
Jongpil Ye,Carl V. Thompson +1 more
TL;DR: In this article, the authors measured the rates of edge retraction for single crystal Ni(1 0 0) and Ni( 1 1 0) films with edges patterned along different in-plane crystallographic directions.
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On the role of diffusion in phase selection during reactions at interfaces
TL;DR: In this article, it is argued that interdiffusion must precede nucleation of new phases during reactions at interfaces between compositionally different phases, and that the relative rates at which elemental components diffuse in the reacting phases control the sequence in which phases can form, and can also strongly affect the relative nucleation rates of alloy products, especially in the transient nucleation regime.
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Fabrication of silicon nanopillar-based nanocapacitor arrays
TL;DR: In this article, the fabrication of silicon nanopillar-based nanocapacitor arrays using metal-assisted etching in conjunction with electrodeposition is described, where the high aspect ratio made possible by the catalyzed etching provides for an increased effective electrode area and hence a significant improvement in the capacitance density.
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Coarsening of particles on a planar substrate: Interface energy anisotropy and application to grain growth in thin films
TL;DR: In this article, growth laws for coplanar spherical caps and discs of constant height are derived for coarsening via surface diffusion, including the effects of anisotropic particle/ substrate interface energies, and these results are also extended to analysis of normal and secondary grain growth in thin films.
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Explosive silicidation in nickel/amorphous‐silicon multilayer thin films
TL;DR: In this paper, a combination of high speed photography, high speed temperature measurements, plan-view transmission electron microscopy, and thin film x-ray diffraction was used to investigate self-propagating explosive reactions in multilayer thin films.