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Carl V. Thompson

Researcher at Massachusetts Institute of Technology

Publications -  422
Citations -  22680

Carl V. Thompson is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Thin film & Grain growth. The author has an hindex of 77, co-authored 416 publications receiving 21156 citations. Previous affiliations of Carl V. Thompson include Max Planck Society & Harvard University.

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Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing

TL;DR: Using a transmission electron microscope weak-beam technique, it is found that pits tend to nucleate at threading dislocations that have a screw component, even when these dislocation are at locations away from the gate-edge.
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Stress engineering using low oxygen background pressures during Volmer–Weber growth of polycrystalline nickel films

TL;DR: In this paper, the authors demonstrate stress engineering during deposition of polycrystalline Ni films through control of the oxygen partial pressure and show that the presence of chemisorbed oxygen limits surface diffusion of Ni adatoms, thereby limiting adatom trapping at grain boundaries.
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Formation of single tiers of bridging silicon nanowires for transistor applications using vapor-liquid-solid growth from short silicon-on-insulator sidewalls.

TL;DR: Three-terminal current-voltage measurements of the structure using the substrate as a planar backgate after VLS nanowire growth reveal transistor behaviour characteristics.
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Characterization of the Young?s modulus, residual stress and fracture strength of Cu?Sn?In thin films using combinatorial deposition and micro-cantilevers

TL;DR: In this paper, microcantilevers coupled with combinatorial deposition were used to characterize the Young?s modulus, residual stress and fracture strength of Cu?Sn?In thin films over a broad range of compositions.
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The Effect of Solute Drag on Grain Growth in Thin Films

TL;DR: In this article, the microstructural evolution of polycrystalline thin films during grain growth under the situation in which grain boundary migration becomes impeded by solute drag is modelled.