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Carl V. Thompson
Researcher at Massachusetts Institute of Technology
Publications - 422
Citations - 22680
Carl V. Thompson is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Thin film & Grain growth. The author has an hindex of 77, co-authored 416 publications receiving 21156 citations. Previous affiliations of Carl V. Thompson include Max Planck Society & Harvard University.
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Growth and properties of (0 0 1)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 /LaNiO 3 films on Si(0 0 1) substrates with TiN buffer layers
TL;DR: In this article, the effect of background gas pressure on the crystallographic texture of polycrystalline thin films has been investigated in detail, and it was shown that under optimized conditions, (0, 0, 1)-oriented PZT/LNO/TiN heterostructures can be grown on both Si(0,0, 1) and SiO 2 /Si substrates.
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Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy
TL;DR: In this article, an improvement in the smoothness and defect density of GaAs films on Si by lowering the arsenic overpressure during growth of the initial layer (the first 500 A) was demonstrated.
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A hierarchical reliability analysis for circuit design evaluation
TL;DR: In this paper, the authors proposed a hierarchical reliability analysis based on the Blech-length concept to identify a large fraction of interconnect graphs in a typical design as immune to electromigration-induced failure.
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Circuit-level reliability requirements for Cu metallization
TL;DR: In this article, a methodology and tool for circuit-level interconnect-reliability analyses has been developed using data from the literature, the layout-specific circuitlevel reliability for Al and dual-damascene Cu metallizations have been compared for various circuits and circuit elements.
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Salt rejection in flow-between capacitive deionization devices
Heena K Mutha,H. Jeremy Cho,Mazdak Hashempour,Brian L. Wardle,Carl V. Thompson,Evelyn N. Wang +5 more
TL;DR: In this article, the authors present a framework for the design of flow-between CDI cells for maximum salt rejection, which is dependent on device specific parameters (system volume, flow rate, inlet and outlet water quality).