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Carl V. Thompson
Researcher at Massachusetts Institute of Technology
Publications - 422
Citations - 22680
Carl V. Thompson is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Thin film & Grain growth. The author has an hindex of 77, co-authored 416 publications receiving 21156 citations. Previous affiliations of Carl V. Thompson include Max Planck Society & Harvard University.
Papers
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Journal ArticleDOI
Electromigration-induced failures in interconnects with bimodal grain size distributions
J. Cho,Carl V. Thompson +1 more
TL;DR: In this paper, the authors investigated the deviation in the time to failure (DTTF) in lines with bimodal structures and found that lines with large grain structures have higher DTTF than lines with small grain structures.
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Formation of Cu–Cu interfaces with ideal adhesive strengths via room temperature pressure bonding in ultrahigh vacuum
TL;DR: In this article, pull-off measurements were used to characterize the tensile toughness of bonds between Cu layers deposited, pressure bonded, and tested under ultrahigh vacuum (<2×10−10Torr).
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Calorimetric studies of reactions in thin films and multilayers
Frans Spaepen,Carl V. Thompson +1 more
TL;DR: The application of differential scanning calorimetry to the study of reactions in thin films is illustrated through a number of examples: the epitaxial regrowth of ion-implanted amorphous silicon, the formation of ammorphous metals by solid-state reaction, formation of intermetallic compounds in a mettalic multilayer, the transformations in nickel/amorphous silicon multilayers, and the identification of microcrystalline structures by the observation of grain growth as discussed by the authors.
Journal ArticleDOI
Experimental study of electromigration in bicrystal aluminum lines
TL;DR: In this article, the authors report a new experimental technique for the study of electromigration in Al lines containing controlled, single, identical grain boundaries with boundary planes perpendicular to the plane of the substrates.
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Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films
Chee Ying Khoo,Chee Ying Khoo,Hai Liu,W. A. Sasangka,Riko I Made,Nobu Tamura,Martin Kunz,Arief Suriadi Budiman,Chee Lip Gan,Chee Lip Gan,Carl V. Thompson,Carl V. Thompson +11 more
TL;DR: In this paper, the authors investigated the crystallization of GeTe films as a function of their deposition temperatures and deposition rates, using X-ray synchrotron radiation and Raman spectroscopy.