scispace - formally typeset
C

Carl V. Thompson

Researcher at Massachusetts Institute of Technology

Publications -  422
Citations -  22680

Carl V. Thompson is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Thin film & Grain growth. The author has an hindex of 77, co-authored 416 publications receiving 21156 citations. Previous affiliations of Carl V. Thompson include Max Planck Society & Harvard University.

Papers
More filters
Journal ArticleDOI

Electromigration-induced failures in interconnects with bimodal grain size distributions

TL;DR: In this paper, the authors investigated the deviation in the time to failure (DTTF) in lines with bimodal structures and found that lines with large grain structures have higher DTTF than lines with small grain structures.
Journal ArticleDOI

Formation of Cu–Cu interfaces with ideal adhesive strengths via room temperature pressure bonding in ultrahigh vacuum

TL;DR: In this article, pull-off measurements were used to characterize the tensile toughness of bonds between Cu layers deposited, pressure bonded, and tested under ultrahigh vacuum (<2×10−10Torr).
Journal ArticleDOI

Calorimetric studies of reactions in thin films and multilayers

TL;DR: The application of differential scanning calorimetry to the study of reactions in thin films is illustrated through a number of examples: the epitaxial regrowth of ion-implanted amorphous silicon, the formation of ammorphous metals by solid-state reaction, formation of intermetallic compounds in a mettalic multilayer, the transformations in nickel/amorphous silicon multilayers, and the identification of microcrystalline structures by the observation of grain growth as discussed by the authors.
Journal ArticleDOI

Experimental study of electromigration in bicrystal aluminum lines

TL;DR: In this article, the authors report a new experimental technique for the study of electromigration in Al lines containing controlled, single, identical grain boundaries with boundary planes perpendicular to the plane of the substrates.