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Chang Jung Kim
Researcher at Samsung
Publications - 65
Citations - 3915
Chang Jung Kim is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Amorphous solid. The author has an hindex of 26, co-authored 63 publications receiving 3652 citations. Previous affiliations of Chang Jung Kim include Ewha Womans University & Kookmin University.
Papers
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Proceedings ArticleDOI
High performance amorphous oxide thin film transistors with self-aligned top-gate structure
Jae Chul Park,Sang-Wook Kim,Sunil Kim,Huaxiang Yin,Ji-Hyun Hur,Sanghun Jeon,Sungho Park,I Hun Song,Youngsoo Park,U.-In Chung,Myung Kwan Ryu,Sangwon Lee,Sungchul Kim,Yongwoo Jeon,Dong Myong Kim,Dae Hwan Kim,Kee-Won Kwon,Chang Jung Kim +17 more
TL;DR: In this paper, a self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays are presented, where Ar plasma is exposed on the source/drain region of active layer to minimize the source and drain series resistances.
Journal ArticleDOI
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Sanghun Jeon,Seung-Eon Ahn,I-hun Song,Chang Jung Kim,U-In Chung,Eunha Lee,Inkyung Yoo,Arokia Nathan,Sungsik Lee,Khashayar Ghaffarzadeh,John Robertson,Kinam Kim +11 more
TL;DR: A gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer and is integrated in a transparent active-matrix photosensor array that has potential applications in contact-free interactive displays.
Journal ArticleDOI
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.
Myoung-Jae Lee,Seungwu Han,Sang Ho Jeon,Bae Ho Park,Bo Soo Kang,Seung-Eon Ahn,Ki-Hwan Kim,Chang Bum Lee,Chang Jung Kim,In-Kyeong Yoo,David H. Seo,Xiang-Shu Li,Jong-Bong Park,Jung-Hyun Lee,Youngsoo Park +14 more
TL;DR: Through experiments on the negative resistance switching phenomenon in Pt-NiO-Pt structures, a nanofilament channels that can be electrically connected or disconnected are fabricated that are ideal for the basis for high-speed, high-density, nonvolatile memory applications.
Journal ArticleDOI
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
Sungho Kim,Sae-jin Kim,Kyung-min Kim,Seung Ryul Lee,Man Chang,Eun-ju Cho,Young-Bae Kim,Chang Jung Kim,U. In Chung,In-Kyeong Yoo +9 more
TL;DR: A complete electro-thermal resistive switching model based on the finite element method is proposed that accurately accounts for the set/reset characteristics, which provides an in-depth understanding of the nature of resistive Switching.
Proceedings ArticleDOI
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory
Seung Ryul Lee,Young-Bae Kim,Man Chang,Kyung-min Kim,Chang Bum Lee,Ji-Hyun Hur,Gyeong-Su Park,Dongsoo Lee,Myoung-Jae Lee,Chang Jung Kim,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: Morevoer et al. as mentioned in this paper used a triple-layer structure (base layer/oxygen exchange layer/barrier layer) for the storage class memory applications, which achieved more than 107 cycles of switching endurance and 10 years of data retention at 85°C.