E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
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Heterogeneous integration of GaSb photodetector on silicon-on insulator waveguide circuits for shortwave-infrared sensing applications
Nannicha Hattasan,L Cerrutti,Jean-Baptiste Rodriguez,Eric Tournié,Dries Van Thourhout,Günther Roelkens +5 more
TL;DR: In this article, the integration of active material onto SOI is based on die-to-wafer adhesive bonding using DVS-BCB as the bonding agent, and the measurement results are also discussed.
Proceedings ArticleDOI
Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms
Michele Paparella,Laura Monge Barlome,Jean Rodriguez,Laurent Cerutti,Marco Grande,Liam O'Faolain,Eric Tournié +6 more
TL;DR: In this paper , the optical coupling between 2.3 μm GaSb-based diode lasers epitaxially grown on a Silicon photonic chip and the passive waveguides was investigated theoretically.
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Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
Ernest Rogowicz,J. Kopaczek,Micha Polak,O. Delorme,Laurent Cerutti,Eric Tournié,J. Rodriguez,Robert Kudrawiec,Marcin Syperek +8 more
TL;DR: In this article , low-temperature carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi ranging from 6 to 8%.
Journal ArticleDOI
Pseudo volume plasmon in arrays of doped and un-doped semiconductors
TL;DR: In this article, it was shown that for a metamaterial consisting of a periodic array of doped and un-doped semiconductors, it is possible to define a frequency ωcffff t corresponding to a pseudo volume plasmon.
Proceedings ArticleDOI
Butt-coupled mid-IR diode lasers grown on patterned Si photonic wafers
A. Remis,Michele Paparella,Laura Monge-Bartolome,A. Gilbert,M. Rio-Calvo,Guilhem Boissier,Marco Grande,Laurent Cerutti,Liam O'Faolain,Jean Rodriguez,Eric Tournié +10 more
TL;DR: In this article , the first GaSb-based diode laser was grown on a patterned Si photonics wafer equipped with SiN waveguides, and around 10% of the emitted light was coupled into the waveguide in good agreement with theoretical calculations.