E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
More filters
Journal ArticleDOI
Interplay between Surface Stabilization, Growth Mode and Strain Relaxation during Molecular-Beam Epitaxy of Highly Mismatched III-V Semiconductor Layers
TL;DR: In this article, the authors demonstrate that the surface stabilization provides an intrinsic means to control the growth mode and to delay strain relaxation during molecular-beam epitaxy of highly mismatched III-V semiconductor layers.
Journal ArticleDOI
High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region
Vittorianna Tasco,N. Deguffroy,Alexei N. Baranov,Eric Tournié,Biswarup Satpati,Achim Trampert,M. S. Dunaevskii,A. N. Titkov +7 more
TL;DR: In this paper, a multistep molecular-beam epitaxy growth technique was developed to grow InSb quantum dots with high structural perfection and high density, which achieved a density exceeding 7×1010cm−2 and lateral sizes in the 20-30nm range.
Journal ArticleDOI
Nanoindentation study of Zn1−xBexSe heteroepitaxial layers
TL;DR: In this paper, the nanoindentation behavior of Zn1−xBexSe heteroepitaxial layers grown onto (001)-oriented GaP and GaAs substrates in the whole composition range 0≤x≤1.
Journal ArticleDOI
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut
Charles Cornet,Simon Charbonnier,Ida Lucci,Lipin Chen,Antoine Létoublon,Angela Alvarez,Karine Tavernier,Tony Rohel,Rozenn Bernard,Jean-Baptiste Rodriguez,Laurent Cerutti,Eric Tournié,Yoan Léger,Mounib Bahri,Gilles Patriarche,Ludovic Largeau,Anne Ponchet,Pascal Turban,Nicolas Bertru +18 more
TL;DR: In this article, the central role of the miscut during group III-V/group IV crystal growth is clarified, and it is inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscutt.
Journal ArticleDOI
Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy
TL;DR: In this paper, the P-related shallow-acceptor level is the shallowest acceptor ever detected in ZnSe with activation energy of 2.791 eV and a series of excited states of this acceptor reveals that it behaves like all substitutional acceptors.