다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.

https://iopscience.iop.org/article/10.1088/0268-1242/18/4/201/pdf

Wide-bandgap semiconductor ultraviolet photodetectors

Several molecules of interest have their absorption signature in the mid-infrared. Spectroscopy is commonly used for the detection of these molecules, especially in the short-wave infrared (SWIR) region due to the low water absorption. Conventional spectroscopic systems consist of a broadband source, detector and dispersive components, making them bulky and difficult to handle. Such systems cannot be used in applications where small footprint and low power consumption is critical, such as portable gas sensors and implantable blood glucose monitors. Silicon-On-Insulator (SOI) offers a compact, low-cost photonic integrated circuit platform realized using CMOS fabrication technology. On the other hand, the GaSb material system allows the realization of high performance SWIR lasers and detectors. Integration of GaSb active components on SOI could therefore result in a compact and low power consumption integrated spectroscopic system. In this paper, we report the study on thin-film GaSb Fabry-Perot lasers integrated on a carrier substrate. The integration is achieved by using an adhesive polymer (DVS-BCB) as the bonding agent. The lasers operate at room temperature at 2.02µm. We obtain a minimum threshold current of 48.9mA in the continuous wave regime and 27.7mA in pulsed regime. This yields a threshold current density of 680A/cm 2 and 385A/cm 2 , respectively. The thermal behaviour of the device is also studied. The lasers operate up to 35 °C, due to a 323 K/W thermal resistance

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Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuit

We present a detailed study of GaSb-based monolithic vertical-cavity surface-emitting lasers (VCSELs) targeting an emission near 2.3 µm. These VCSELs rely on two n-type epitaxial semiconductor Bragg-mirrors and on a tunnel-junction for electron-hole conversion. Bragg mirror and active region designs, epitaxial material properties, device modelling, fabrication and performances are all addressed in order to fully assess the potential of this technology. Monolithic aperture-VCSELs, where carrier confinement is ensured by selective under-etching of the tunnel junction, have been fabricated in both bipolar-cascade VCSEL as well as single-stage VCSEL configurations. All devices have been thoroughly characterized and experimental data have been analysed in light of modelling trends. Our results give new insights into the physics of GaSb monolithic VCSELs and provide keys to their successful design. Further, they show that this technology is a viable option for tunable mid-infrared sources.

http://iopscience.iop.org/article/10.1088/0022-3727/46/49/495101/pdf

Mid-IR GaSb-based monolithic vertical-cavity surface-emitting lasers

The electroluminescence of GaInNAs∕GaAs quantum well light-emitting diodes is analyzed as a function of temperature and injection current. The relative influence of nonradiative carrier recombination, recombination from localized states, and conduction-band to valence-band recombination is discussed. The localized states are found to dominate the emission and the external quantum efficiency only at low temperatures and currents. When temperature and∕or injection level are increased, band-to-band transitions become the main recombination mechanism. Nonradiative recombination is strongly thermally activated, and becomes the dominant process above 75K. As a result of postgrowth rapid thermal annealing, the device luminescence efficiency increases by over one order of magnitude due to a decrease in the density of nonradiative recombination centers.

Dominant carrier recombination mechanisms in GaInNAs∕GaAs quantum well light-emitting diodes

We have grown GaInSbBi single layers and GaInSbBi/GaSb multiquantum well (MQW) structures by molecular beam epitaxy. We observed that the addition of In strongly modifies and reduces the Bi incorporation into GaSb. For an In concentration of ∼3.7%, we reached a maximum Bi content of 10.5% while the highest Bi concentration falls to 3% with 10% of In. Additionally, droplets appear at lower Bi composition than in GaSbBi alloys. Finally, the optical properties of GaInSbBi/GaSb MQW structures were characterized by photoluminescence spectroscopy at room temperature. The longest emission wavelength observed was close to 2.6 μm for a composition of 10.5% and 3.7% of bismuth and indium, respectively.

Molecular-beam epitaxy of GaInSbBi alloys

Non‐lattice‐matched GaxIn1−xAs/AlyIn1−yAs modulation‐doped heterostructures grown on (100) InP by molecular‐beam epitaxy suitable for application in field‐effect transistors have been studied. A computer simulation of the x‐ray diffraction pattern proves to be necessary to obtain precise information about the structural parameters of the samples. The high crystal quality of our samples is demonstrated by the excellent agreement between experimental and simulated x‐ray‐diffraction curves. The transport characteristics of Ga0.38In0.62As/AlyIn1−yAs heterostructures including the evolution of the mobility and of the two‐dimensional electron‐gas density with temperature and structural parameters are discussed in relation with the relevant scattering mechanisms. The use of a thin spacer layer makes it possible to obtain very high conductivities. Both x‐ray and transport measurements show that the strained GaxIn1−xAs layers are pseudomorphic well above the critical thickness calculated with the mechanical equili...

Structural properties and transport characteristics of pseudomorphic GaxIn1−xAs/AlyIn1−yAs modulation‐doped heterostructures grown by molecular‐beam epitaxy

Eric Tournié

Papers

Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuit

Mid-IR GaSb-based monolithic vertical-cavity surface-emitting lasers

Dominant carrier recombination mechanisms in GaInNAs∕GaAs quantum well light-emitting diodes

Molecular-beam epitaxy of GaInSbBi alloys

Structural properties and transport characteristics of pseudomorphic GaxIn1−xAs/AlyIn1−yAs modulation‐doped heterostructures grown by molecular‐beam epitaxy