E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
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Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys
TL;DR: In this article, the number of N atoms in N-rich regions mostly due to nonrandom N incorporation in GaAsN (N∼4%), referred to as the Nr rate, is studied using a nonstandard Raman setup that addresses transverse symmetry.
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Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs
TL;DR: In this paper, the solid phase miscibility gap of the InAs-Sb-P pseudo-ternary system has been studied in the 560-600°C temperature range.
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Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers
TL;DR: In this article, the authors investigated the influence of both the GaAs surface stoichiometry and the nucleation procedure on the defect density in ZnSe pseudomorphic layer and showed that the use of migration enhanced epitaxy (MEE) at low temperature in the first steps of the growth decreases the defect densities by two orders of magnitude.
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MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics
Eric Tournié,Achim Trampert +1 more
TL;DR: In this paper, a bird's-eye view of the interface formation during MBE growth of various quasi lattice-matched as well as highly mismatched semiconductor heterostructures is presented.
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Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission
TL;DR: In this paper, an antimonide-based InAs/GaSb/InSb short-period superlattice (SPSL) laser diode on GaSb substrate for mid-infrared emission has been modeled by an accurate eight-band k.p model.