E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
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Critical thickness of Zn1−xCdxSe/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates
TL;DR: In this article, high-resolution x-ray diffraction (HRXRD) and photoluminescence spectroscopy was used to study a series of Zn1−xCdxSe/ZnSe multi-quantum well heterostructures grown by molecular-beam epitaxy on relaxed ZnSe buffer layers, themselves grown on bare GaAs substrates.
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Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness
Esperanza Luna,O. Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez,Achim Trampert +5 more
TL;DR: In this article, the microstructure of a series of Ga(Sb, Bi)/GaSb quantum wells (QW) with varying Bi content and QW thicknesses using transmission electron microscopy was analyzed.
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Thermal performance of GaInSb quantum well lasers for silicon photonics applications
Christopher R. Fitch,Graham William Read,Igor P. Marko,Dominic A. Duffy,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié,Stephen J. Sweeney +7 more
TL;DR: In this article, the authors investigated the thermal performance of GaSb-based alloys, which may be grown directly on silicon, and showed that the temperature dependence of the devices is dominated by carrier leakage from the QW region to the Xb minima of the Al0.35Ga0.65As0.03Sb0.68In0.2Sb/Al0.55
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Carrier recombination processes in GaAsN: from the dilute limit to alloying
R. Intartaglia,Thierry Taliercio,Pierre Lefebvre,Pierre Valvin,Thierry Bretagnon,Thierry Guillet,Bernard Gil,U. Tisch,E. Finkman,J. Salzman,M.-A. Pinault,Eric Tournié +11 more
TL;DR: In this article, low-temperature time-resolved photoluminescence (TR-PL) experiments were used to study the dependence on nitrogen composition of the nature, the energy and the dynamics of radiative carrier recombinations in GaAs1−xNx alloys.
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Surface stoichiometry and interface formation during molecular-beam epitaxy of strained InAs/AlxGa0.48-xIn0.52As heterostructures
TL;DR: In this article, the surface stoichiometry of the film was used to control the interface formation and sample quality during molecular-beam epitaxy of strained InAs films buried in an AlxGa0.48−xIn0.52As matrix lattice matched to InP substrates.