E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
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Journal ArticleDOI
Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy
Esperanza Luna,Biswarup Satpati,Jean-Baptiste Rodriguez,Alexei N. Baranov,Eric Tournié,Achim Trampert +5 more
TL;DR: In this paper, the compositional sharpness of SPSL is characterized using transmission electron microscopy (TEM) images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions.
Journal ArticleDOI
GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature
TL;DR: In this article, a Sb-based type-I laser was constructed using solid-source molecular beam epitaxy and comprised two Sb quantum wells embedded in AlGaAsSb barriers.
Journal ArticleDOI
GaSbBi/GaSb quantum well laser diodes
O. Delorme,O. Delorme,Laurent Cerutti,Laurent Cerutti,Esperanza Luna,G. Narcy,G. Narcy,Achim Trampert,Eric Tournié,Eric Tournié,Jean-Baptiste Rodriguez,Jean-Baptiste Rodriguez +11 more
TL;DR: In this paper, structural and optical properties of GaSbBi single layers and GaSBBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GAsb substrates are reported.
Journal ArticleDOI
Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer
TL;DR: In this article, the crystalline and optical properties of AlyIn1−yAs ternary alloys grown by molecular beam epitaxy on InP substrates were studied and a significant reduction of the clustering level in these samples was interpreted in terms of a smoothing of the growth front, a thermodynamically controlled growth mode, and the interplay between In segregation and In desorption.
Book ChapterDOI
Mid-Infrared Semiconductor Lasers: A Review
Eric Tournié,Alexei N. Baranov +1 more
TL;DR: In this paper, a review of the progress in the development of MIR semiconductor laser diodes is presented, focusing on the so-called antimonides, that is, III-V compound semiconductors based on GaSb, InAs, AlSb and their alloys.