E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
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Journal ArticleDOI
Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations
Michael Niehle,Achim Trampert,Jean-Baptiste Rodriguez,Jean-Baptiste Rodriguez,Laurent Cerutti,Laurent Cerutti,Eric Tournié,Eric Tournié +7 more
TL;DR: In this article, the three-dimensional arrangement of threading dislocations in a III-Sb based mid-infrared laser structure is studied by electron tomography (in a scanning transmission electron microscope).
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New results and trends in the solid phase recrystallization of ZnSe
P Lemasson,J.O. Ndap,S. Fusil,A. Rivière,B Qu'hen,Alain Lusson,Gérard Neu,Eric Tournié,G. Geoffroy,A. Zozime,Robert Triboulet +10 more
TL;DR: In this paper, the orientation relationship between initial texture of the starting material and SPR grown crystals is studied by X-ray diffraction Twins are shown to be already present in the micrograins of the source material from SEM and TEM observations.
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Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction
TL;DR: In this article, the growth of the II-VI compound-semiconductor BeTe on GaAs substrates was studied through reflection high-energy electron diffraction (RHEED).
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Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe
James Davies,Daniel Wolverson,Stefan Strauf,Peter Michler,Jürgen Gutowski,M. Klude,Kazuhiro Ohkawa,Detlef Hommel,Eric Tournié,J. P. Faurie +9 more
TL;DR: In this paper, the authors used spin-flip Raman scattering to provide direct experimental evidence that shallow phosphorus acceptors in relaxed ZnSe epitaxial layers grown on GaAs lie at sites of predominantly trigonal local symmetry.
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In situ determination of the growth conditions of GaSbBi alloys
TL;DR: In this article, a detailed analysis of these RHEED oscillations gives an excellent insight into the variation of the Bi incorporation rate over the whole 2−13% composition range.