E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
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Mid-infrared Sb-based interband lasers grown on on-axis Si (001) substrates
A. Remis,Daniel A. Diaz-Thomas,Laura Monge Bartolome,M. Rio-Calvo,A. Gilbert,Guilhem Boissier,Alexei N. Baranov,J. Rodriguez,Laurent Cerutti,Eric Tournié +9 more
TL;DR: In this article , the GaSb-based interband laser is grown on an on-axis silicon substrate working in continuous wave above temperature and emitting between 2 and 5 μm.
Proceedings ArticleDOI
M-lines characterization of the refractive index of GaSb and AlXGa1-XAsSb lattice-matched onto GaSb in the mid-infrared
S. Roux,Pierre Barritault,Olivier Lartigue,Laurent Cerutti,Eric Tournié,Bruno Gérard,Arnaud Grisard +6 more
TL;DR: In this article, M-lines measurements of GaSb and AlxGa1-xAsSb refractive index in the 2.15-7.35 µm range were performed.
Journal ArticleDOI
Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying
A. Gilbert,Michel Ramonda,Laurent Cerutti,Charles Cornet,Gilles Patriarche,Eric Tournié,Jean Rodriguez +6 more
TL;DR: In this paper , the precise control of III-V semiconductors' antiphase domain formation and evolution during the epitaxial growth on an "on-axis" Si (001) substrate with a very low but controlled miscut is reported.
Journal ArticleDOI
Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides
A. Remis,Laura Monge-Bartolome,Michele Paparella,A. Gilbert,Guilhem Boissier,Marco Grande,Alan Blake,Liam O'Faolain,Laurent Cerutti,Jean Rodriguez,Eric Tournié +10 more
TL;DR: In this article , a mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO 2 .