E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
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Journal ArticleDOI
A universal description of III-V/Si epitaxial growth processes
Ida Lucci,Simon Charbonnier,Laurent Pedesseau,Maxime Vallet,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié,Rozenn Bernard,Antoine Létoublon,N. Bertru,A. Le Corre,Stephanie Rennesson,Fabrice Semond,Gilles Patriarche,Ludovic Largeau,Pascal Turban,Anne Ponchet,Charles Cornet +17 more
TL;DR: In this paper, a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation, is presented, and a detailed analysis of the free energy variations is provided.
Journal ArticleDOI
Long-wave phonons in ZnSe-BeSe mixed crystals: Raman scattering and percolation model
TL;DR: In this paper, the authors extended the percolation model to longitudinal-optical phonons and applied the Hon and Faust treatment to a modified-random-element-isodisplacement model generalized to multioscillators.
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Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics.
Rodolphe Vaillon,Jean-Philippe Perez,Christophe Lucchesi,Dilek Cakiroglu,Pierre-Olivier Chapuis,Thierry Taliercio,Eric Tournié +6 more
TL;DR: By taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell by using indium antimonide.
Journal ArticleDOI
Surface stoichiometry, epitaxial morphology and strain relaxation during molecular beam epitaxy of highly strained InAs/Ga0.47In0.53As heterostructures
Eric Tournié,Klaus H. Ploog +1 more
TL;DR: In this paper, the influence of the surface stoichiometry of the InAs film on the growth mechanisms at work during molecular beam epitaxy of highly mismatched (3.2%) InAs films buried in a Ga 0.47 In 0.53 As matrix was investigated.
Journal ArticleDOI
Silicon surface preparation for III-V molecular beam epitaxy
K. Madiomanana,K. Madiomanana,Mounib Bahri,Jean-Baptiste Rodriguez,Jean-Baptiste Rodriguez,Ludovic Largeau,Laurent Cerutti,Laurent Cerutti,Olivia Mauguin,A. Castellano,A. Castellano,Gilles Patriarche,Eric Tournié,Eric Tournié +13 more
TL;DR: In this article, a silicon substrate preparation for III-V molecular-beam epitaxy (MBE) is described. But the preparation process is performed in an ex situ and in situ manner.