E
Eric Tournié
Researcher at University of Montpellier
Publications - 329
Citations - 5222
Eric Tournié is an academic researcher from University of Montpellier. The author has contributed to research in topics: Molecular beam epitaxy & Laser. The author has an hindex of 36, co-authored 311 publications receiving 4621 citations. Previous affiliations of Eric Tournié include Institut Universitaire de France & Max Planck Society.
Papers
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Journal ArticleDOI
GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm
Laurent Cerutti,Laurent Cerutti,A. Castellano,A. Castellano,Jean-Baptiste Rodriguez,Jean-Baptiste Rodriguez,Mounib Bahri,Ludovic Largeau,Andrea Balocchi,K. Madiomanana,K. Madiomanana,Francois Lelarge,Gilles Patriarche,Xavier Marie,Eric Tournié,Eric Tournié +15 more
TL;DR: In this article, the material, optical, and lasing properties of innovative GaInSb/Al-Sb composite quantum wells (CQWs) are investigated in detail.
Journal ArticleDOI
Evidence of N-related compensating donors in lightly doped ZnSe:N
TL;DR: In this paper, the authors used a nitrogen/argon mixed plasma to dope p-type ZnSe during molecular beam epitaxy and showed that this technique allowed control of the net acceptor concentration in the whole range from 1015 to 1018 cm−3.
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Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas.
M. J. Milla,F. Barho,F. Gonzalez-Posada,Laurent Cerutti,Benoit Charlot,M. Bomers,Frank Neubrech,Eric Tournié,Thierry Taliercio +8 more
TL;DR: These results pave the way towards molecule fingerprint sensor manufacturing by tailoring the plasmonic resonators to get a maximum surface enhanced infrared absorption at the target vibrational mode.
Journal ArticleDOI
Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
Eric Tournié,Laura Monge Bartolome,Marta Rio Calvo,Zeineb Loghmari,Daniel A. Diaz-Thomas,Roland Teissier,Alexei N. Baranov,Laurent Cerutti,Jean Rodriguez +8 more
TL;DR: In this article , a review of the epitaxial integration of antimonide laser overgrowth on Si is presented, where the authors show that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels.
Journal ArticleDOI
p-type doping of Zn(Mg)BeSe epitaxial layers
Eric Tournié,J. P. Faurie +1 more
TL;DR: In this article, the nitrogen-plasma p-type doping properties of ZnBeSe-ternary and ZnMgBeSequaternary widebandgap alloys grown by molecular-beam epitaxy on (001)