다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.

https://iopscience.iop.org/article/10.1088/0268-1242/18/4/201/pdf

Wide-bandgap semiconductor ultraviolet photodetectors

We have investigated the molecular-beam epitaxy (MBE) of InSb nanostructures on (100) GaSb substrates. We show that MBE leads to a low density (∼1−3×109 cm−2) of large islands even when varying the growth conditions on a wide range (substrate temperature ∼370−450 °C, growth rate ∼0.3−1.2 ML∕s). Plastic relaxation takes place from the onset of island formation, regardless of the amount of InSb deposited after the two-dimensional to three-dimensional transition. These results show that In adatoms have a very long diffusion length on a Sb-terminated surface and that the energy for dislocation generation in InSb is low. This can be attributed to the low enthalpy of formation and low melting point of InSb. To circumvent this problem we have developed a MBE growth procedure based on the deposition of an amorphous InSb layer at low temperature followed by an annealing step to allow for reorganization to take place. This dramatic change of the growth conditions leads to the formation of small InSb quantum dots wi...

Molecular-beam epitaxy of InSb/GaSb quantum dots

Tailored plasmonic nanoantennas are needed
for diverse applications, among those sensing. Surfaceenhanced
infrared absorption (SEIRA) spectroscopy using
adapted nanoantenna substrates is an efficient technique
for the selective detection of molecules by their vibrational
spectra, even in small quantity. Highly doped semiconductors
have been proposed as innovative materials for
plasmonics, especially for more flexibility concerning the
targeted spectral range. Here, we report on rectangularshaped,
highly Si-doped InAsSb nanoantennas sustaining
polarization switchable longitudinal and transverse
plasmonic resonances in the mid-infrared. For small array
periodicities, the highest reflectance intensity is obtained.
Large periodicities can be used to combine localized surface
plasmon resonances (SPR) with array resonances,
as shown in electromagnetic calculations. The nanoantenna
arrays can be efficiently used for broadband SEIRA
spectroscopy, exploiting the spectral overlap between the
large longitudinal or transverse plasmonic resonances
and narrow infrared active absorption features of an analyte
molecule. We demonstrate an increase of the vibrational
line intensity up to a factor of 5.7 of infrared-active
absorption features of vanillin in the fingerprint spectral
region, yielding enhancement factors of three to four
orders of magnitude. Moreover, an optimized readout for
SPR sensing is proposed based on slightly overlapping
longitudinal and transverse localized SPR.

https://www.degruyter.com/downloadpdf/j/nanoph.2018.7.issue-2/nanoph-2017-0052/nanoph-2017-0052.xml

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

GaSb lattice‐matched Ga1−xInxAsySb1−y has been grown by liquid phase epitaxy on (100) and (111)B oriented substrates using initial melt supersaturation ΔT varying from 10 to 30 °C, at growth temperatures >600 °C. It is shown that the band‐gap cutoff wavelength, measured at room temperature by the electroreflectance method, is ∼2.38 μm for (100) layers whatever ΔT, and increases from 2.38 μm up to 2.51 μm for (111)B oriented layers when ΔT is increased from 15 to 25 °C. Photoluminescence experiments at 2 K confirm the band‐gap reduction occurring at high ΔT with the (111)B orientation.

2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy

We report on the molecular-beam epitaxy of ZnBeSe ternary alloys lattice matched onto GaAs substrates. We demonstrate that these alloys can be grown with a high structural perfection. X-ray linewidths down to 27 arcsec are obtained even though the growth is carried out on bare substrates. Transmission electron microscopy reveals the high quality of the interface. Photoluminescence spectra of undoped layers are dominated by free-exciton recombinations. The excitonic gap is determined to be 2.863 eV at 9 K. Finally, high carrier concentrations are obtained for both n-type and p-type doping. These results are promising in view of fabricating laser diodes with this material system.

Eric Tournié

Papers

Molecular-beam epitaxy of InSb/GaSb quantum dots

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy

Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates