Eric Tournié

TL;DR: In this article, single and multiple quantum wells (QWS) grown in InP by modified solid source molecular beam epitaxy are investigated by photoluminescence (PL) spectroscopy, and the excitonic nature of low-temperature recombinations and the observations of luminescence at room temperature demonstrate the high quality of the samples and the potential of the InAs/AlxGa0.48-xIn0.52As system for optoelectronic device applications.

TL;DR: In this paper, the defect free growth of GaAs/GaSb(001) was investigated and the stoichiometry of the nanostructures was intermixed with the GaSb matrix material, particularly for low amounts of deposited GaAs.

TL;DR: In this paper, a picture based on simple percolative concepts for the basic understanding of vibrational properties in the new attractive class of ternary semiconductor alloys made of materials with highly contrasted bond stiffness is proposed.

TL;DR: An optimized structure emitting at 3.3 µm achieves an internal quantum efficiency of 65% per stage in good agreement with conventional ICL using InAs/AlSb superlattice cladding layers, in spite of internal losses of 15 cm-1 due to higher optical losses in the n-type AlGaAsSb alloys.

TL;DR: In this article, the growth by molecular-beam epitaxy of novel electrically pumped type-II multi-quantum well (MQW) Sb-based laser diodes in which only the holes are quantum confined was studied.