H
Herman Maes
Researcher at Katholieke Universiteit Leuven
Publications - 310
Citations - 10763
Herman Maes is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon & Field-effect transistor. The author has an hindex of 47, co-authored 310 publications receiving 10503 citations. Previous affiliations of Herman Maes include Siemens & Alcatel-Lucent.
Papers
More filters
Journal ArticleDOI
A reliable approach to charge-pumping measurements in MOS transistors
TL;DR: In this article, a new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented.
Journal ArticleDOI
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
Robin Degraeve,Guido Groeseneken,R. Bellens,J. L. Ogier,M. Depas,Philippe Roussel,Herman Maes +6 more
TL;DR: In this paper, a percolation-based model for intrinsic breakdown in thin oxide layers is proposed, which can explain the experimentally observed statistical features of the breakdown distribution, such as the increasing spread of the Q/sub BD/-distribution for ultrathin oxides.
Journal ArticleDOI
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
TL;DR: In this article, a charge pumping technique is used to determine the degradation mechanisms in MOS transistors under all kinds of aging conditions (e.g., irradiation, hot-carrier, Fowler-Nordheim stress) and to quantify the degradation.
Journal ArticleDOI
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
TL;DR: In this article, the degradation behavior of n-channel transistors under alternating injection conditions is discussed and fully explained based on the static stress degradation model for both channel types using the charge-pumping technique.
Proceedings ArticleDOI
Silicon-on-insulator 'gate-all-around device'
TL;DR: In this paper, the authors describe the process fabrication and the electrical characteristics of an SOI MOSFET with gate oxide and a gate electrode not only on top of the active silicon film but also underneath it.