Jan Misiewicz

TL;DR: In this article, the influence of the nanocrystal matrix on the optical properties of lanthanide dopants is investigated with europium ions used as local crystal field probes, and the analysis is performed on small NaYF4 and NaGdF4 nanocrystals obtained by the thermolysis of the corresponding metal trifluoroacetates.

TL;DR: Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas with resonant optical excitation shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, underlining the importance of hole localization.

TL;DR: In this paper, the growth by molecular beam epitaxy of GaBixAs1−x epilayers on (311)B GaAs substrates was reported, and the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the ( 311)B epilayer than in (001) epil layers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy.

TL;DR: Truly alloyed PbS(x)Se(1-x) (x = 0-1) nanocrystals (∼5 nm in size) have been prepared, and their resulting optical properties are red-shifted systematically as the sulfur content of the materials increases.

TL;DR: In this paper, a semiempirical tight-binding electronic-energy-band structures of the following semiconductors are presented: (i) Cd, Cc, Zn, and Zn.