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Jingbo Li

Researcher at Beijing Institute of Technology

Publications -  465
Citations -  22526

Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.

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Band offsets and heterostructures of two-dimensional semiconductors

TL;DR: In this paper, the band offsets and heterostructures of monolayer and few-layer transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) are investigated from first principles calculations.
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Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

TL;DR: This work investigates effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing and finds a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation.
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Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

TL;DR: This work demonstrates large-area (>tens of micrometers) heterostructures of CVD-grown WS2 and MoS2 monolayers, where the interlayer interaction is externally tuned from noncoupling to strong coupling, which opens up venues to creating new material systems with rich functionalities and novel physical effects.
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Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating.

TL;DR: Physi-sorbed O2 and/or H2O molecules electronically deplete n-type materials such as MoS2 and MoSe2, which weakens electrostatic screening that would otherwise destabilize excitons, leading to the drastic enhancement in photoluminescence.