N
Naganivetha Thiyagarajah
Researcher at GlobalFoundries
Publications - 42
Citations - 732
Naganivetha Thiyagarajah is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Magnetic anisotropy & Magnetization. The author has an hindex of 15, co-authored 42 publications receiving 617 citations. Previous affiliations of Naganivetha Thiyagarajah include Trinity College, Dublin & National University of Singapore.
Papers
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Journal ArticleDOI
Fabrication and characterization of bit-patterned media beyond 1.5 Tbit/in2.
Joel K. W. Yang,Yunjie Chen,Yunjie Chen,Tianli Huang,Huigao Duan,Naganivetha Thiyagarajah,Hui Kim Hui,Siang Huei Leong,Vivian Ng +8 more
TL;DR: The method presented will enable studies on magnetic bits packed at ultra-high densities, and can be combined with other scalable patterning methods such as templated self-assembly and nanoimprint lithography for high-volume manufacturing.
Proceedings ArticleDOI
Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications
Vinayak Bharat Naik,J. H. Lim,Tae Young Lee,W. P. Neo,Hemant Dixit,L. C. Goh,T. Ling,J. Hwang,D. Zeng,J. W. Ting,Kangho Lee,Eng Huat Toh,L. Zhang,R. Low,N. Balasankaran,L. Y. Zhang,K. W. Gan,L. Y. Hau,Johannes Mueller,B. Pfefferling,O. Kallensee,K. Yamane,S. L Tan,Chim Seng Seet,Y. S. You,S. T. Woo,E. Quek,S. Y. Siah,John Pellerin,R. Chao,J. Kwon,Naganivetha Thiyagarajah,N. L. Chung,S. H. Jang,Behtash Behin-Aein +34 more
TL;DR: In this paper, a manufacturable 22nm FD-SOI 40Mb embedded MRAM (eMRAM) was demonstrated to achieve product functionality and reliability at package level across industrial-grade operating temperature range (−40 to 125 °C) with ECC-off mode.
Journal ArticleDOI
Giant spontaneous Hall effect in zero-moment Mn2RuxGa
Naganivetha Thiyagarajah,Yong Chang Lau,Davide Betto,Kiril Borisov,J. M. D. Coey,Plamen Stamenov,Karsten Rode +6 more
TL;DR: In this article, the spin-dependent transport properties of Mn2RuxGa thin-films are studied as function of the Ru concentration and the substrate-induced strain, and the large spontaneous Hall angle of 7.7% is a signature of its half-metallicity.
Journal ArticleDOI
Designing a fully compensated half-metallic ferrimagnet
Mario Žic,Karsten Rode,Naganivetha Thiyagarajah,Yong Chang Lau,Davide Betto,J. M. D. Coey,Stefano Sanvito,K. J. O'Shea,Ciaran Ferguson,Donald A. MacLaren,Thomas Archer +10 more
TL;DR: In this article, a set of high-throughput ab initio density functional theory calculations and a detailed experimental characterization are presented to correctly describe the nominal Mn-Ru-Ga thin films, in particular, with regard to site disorder and defects.
Proceedings ArticleDOI
CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications
Danny Pak-Chum Shum,Dimitri Houssameddine,S. T. Woo,Y. S. You,J. Wong,K. W. Wong,C. C. Wang,Kangho Lee,K. Yamane,Vinayak Bharat Naik,Chim Seng Seet,Taiebeh Tahmasebi,C. Hai,H. Yang,Naganivetha Thiyagarajah,R. Chao,J. W. Ting,N. L. Chung,T. Ling,T. H. Chan,S. Y. Siah,Rajesh R. Nair,Sarin A. Deshpande,Renu Whig,Kerry Joseph Nagel,Sanjeev Aggarwal,M. DeHerrera,J. Janesky,Ming-Wei Lin,H.-J. Chia,M. Hossain,H. Lu,Sumio Ikegawa,Frederick B. Mancoff,G. Shimon,Jon M. Slaughter,J. J. Sun,Michael Tran,Syed M. Alam,Thomas W. Andre +39 more
TL;DR: An unprecedented demonstration of a robust STT-MRAM technology designed in a 2x nm CMOS-embedded 40 Mb array with full array functionality, process uniformity and reliability, and 10 years data retention at 125C with extended endurance to ∼ 107 cycles is presented.