Proceedings ArticleDOI
Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications
Vinayak Bharat Naik,J. H. Lim,Tae Young Lee,W. P. Neo,Hemant Dixit,L. C. Goh,T. Ling,J. Hwang,D. Zeng,J. W. Ting,Kangho Lee,Eng Huat Toh,L. Zhang,R. Low,N. Balasankaran,L. Y. Zhang,K. W. Gan,L. Y. Hau,Johannes Mueller,B. Pfefferling,O. Kallensee,K. Yamane,S. L Tan,Chim Seng Seet,Y. S. You,S. T. Woo,E. Quek,S. Y. Siah,John Pellerin,R. Chao,J. Kwon,Naganivetha Thiyagarajah,N. L. Chung,S. H. Jang,Behtash Behin-Aein +34 more
Reads0
Chats0
TLDR
In this paper, a manufacturable 22nm FD-SOI 40Mb embedded MRAM (eMRAM) was demonstrated to achieve product functionality and reliability at package level across industrial-grade operating temperature range (−40 to 125 °C) with ECC-off mode.Abstract:
We demonstrate the manufacturable 22nm FD-SOI 40Mb embedded MRAM (eMRAM), by achieving product functionality and reliability at package level across industrial-grade operating temperature range (−40 to 125 °C) with ECC-off mode. The magnetic tunnel junction stack, integration and etch processes were optimized to achieve superior MTJ performances to meet all product requirements. From package level data, we confirmed the product reliability by passing LTOL, HTOL, 1M endurance cycling and 5x solder reflows tests with failure rate < 1 ppm. In addition, we demonstrate the eMRAM capability to cover stand-by magnetic immunity of ~ 600 Oe at 105 °C for 10 years and active-mode magnetic immunity of ~500 Oe.read more
Citations
More filters
Journal ArticleDOI
Compute-in-Memory Chips for Deep Learning: Recent Trends and Prospects
TL;DR: In this paper, the authors survey the recent progresses in SRAM and RRAM-based CIM macros that have been demonstrated in silicon and discuss general design challenges of the CIM chips including analog-to-digital conversion bottleneck, variations in analog compute, and device non-idealities.
Journal ArticleDOI
The promise of spintronics for unconventional computing
Giovanni Finocchio,Massimiliano Di Ventra,Kerem Y. Camsari,Karin Everschor-Sitte,Pedram Khalili Amiri,Zhongming Zeng +5 more
TL;DR: In this article, the authors discuss how spintronics may aid in the realization of efficient devices, primarily focusing on magnetic tunnel junctions, and provide a perspective on how these devices can impact the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing.
Journal ArticleDOI
From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review
TL;DR: The article concludes with the challenges and future prospects of hybrid CMOS/MTJ circuits, which will motivate people in academia to cultivate research in this domain and industry to realize the prototype for a wide range of potential applications.
Journal ArticleDOI
Scaling magnetic tunnel junction down to single-digit nanometers - Challenges and prospects
TL;DR: The scaling of MTJ technology is reviewed, from in-plane anisotropy MTJs to perpendicular interfacial- or shape-anisotrop MTJs, and challenges and prospects in the future 1X- and X-nm era are discussed.
Journal ArticleDOI
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹
Sadahiko Miura,K. Nishioka,Hiroshi Naganuma,T. V. A. Nguyen,Hiroaki Honjo,Shoji Ikeda,T. Watanabe,H. Inoue,Masaaki Niwa,Takaho Tanigawa,Y. Noguchi,Toru Yoshizuka,M. Yasuhira,Tetsuo Endoh +13 more
TL;DR: In this article, a quadruple-interface perpendicular magnetic tunnel junction (MTJ) was fabricated down to 33 nm using physical vapordeposition, reactive ion etching, and damage-control integration process technologies that were developed under a 300mm process.
Related Papers (5)
2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications
Juan G. Alzate,P. Hentges,Rownak Jahan,Aaron J. Littlejohn,M. Mainuddin,Ouellette Daniel G,Pellegren James,Tanmoy Pramanik,Conor P. Puls,Pedro A. Quintero,Tofizur Rahman,Umut Arslan,M. Sekhar,Sell Bernhard,M. Seth,Smith Andrew,Smith Angeline K,Liqiong Wei,Christopher J. Wiegand,Oleg Golonzka,Fatih Hamzaoglu,P. Bai,Justin S. Brockman,Y. J. Chen,Nilanjan Das,Kevin J. Fischer,Tahir Ghani,Philip E. Heil +27 more
1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology
Kwan-Heum Lee,Won-Woong Kim,J. H. Lee,Byoung-Jae Bae,J.H. Park,I. H. Kim,Bum-seok Seo,Sung-hee Han,Y. Ji,H. T. Jung,Seong-Geon Park,J. H. Bak,O. I. Kwon,J. W. Kye,Yihwan Kim,Sangwoo Pae,Yoon-Jong Song,Gitae Jeong,Ki-Hyun Hwang,Gwan-Hyeob Koh,H. K. Kang,E. S. Jung,Yong-Jae Kim,Chan-kyung Kim,Artur Antonyan,D. H. Chang,Sun-Kyu Hwang,G. W. Lee,N. Y. Ji +28 more