Journal ArticleDOI
Critical Review of the Current Status of Thickness Measurements for Ultrathin SiO2 on Si, Part V: Results of a CCQM Pilot Study
Martin P. Seah,Steve J. Spencer,Farid Bensebaa,I Vickridge,H.-U. Danzebrink,Michael Krumrey,Th. Gross,W Oesterle,Elke Wendler,Bernd Rheinländer,Yasushi Azuma,Isao Kojima,Noboru Suzuki,Mineharu Suzuki,Shigeo Tanuma,D. W. Moon,Hansuek Lee,H Cho,H Y. Chen,Andrew T. S. Wee,Thomas Osipowicz,J S. Pan,W A. Jordaan,Roland Hauert,Ulrich E. Klotz,C. van der Marel,Marcel A. Verheijen,Y. Tamminga,Chris Jeynes,Paul Bailey,S Biswas,U Falke,Nhan V. Nguyen,Deane Chandler-Horowitz,James R. Ehrstein,D Muller,Joseph A. Dura +36 more
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TLDR
In this paper, a study was carried out for the measurement of ultrathin SiO on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm.Abstract:
A study was carried out for the measurement of ultrathin SiO on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed.read more
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Journal ArticleDOI
Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers
TL;DR: In this article, the ozone-based oxide layers were applied to the electron-selective contact (n-TOPCon) on planar and textured surfaces, and the oxide properties as stoichiometry and layer thickness were analyzed by means of X-ray photoelectron spectroscopy (XPS), spectral ellipsometry (SE) and transmission electron microscopy (TEM).
Journal ArticleDOI
Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
Sebastien Plissard,Kimberley A. Dick,Guilhem Larrieu,Guilhem Larrieu,Sylvie Godey,Ahmed Addad,Xavier Wallart,Philippe Caroff +7 more
TL;DR: Growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon and a precise positioning process using a hole array in a dielectric layer thermally grown on silicon are demonstrated.
Journal ArticleDOI
Counting the atoms in a 28Si crystal for a new kilogram definition
Birk Andreas,Yasushi Azuma,Guido Bartl,Peter Becker,Horst Bettin,Michael Borys,I. Busch,P Fuchs,Kenichi Fujii,Hiroyuki Fujimoto,Ernest G. Kessler,Michael Krumrey,Ulrich Kuetgens,Naoki Kuramoto,Giovanni Mana,Enrico Massa,Shigeki Mizushima,Arnold Nicolaus,A. Picard,Axel Pramann,Olaf Rienitz,Detlef Schiel,S. Valkiers,A. Waseda,Sabine Zakel +24 more
TL;DR: In this article, the Avogadro constant was determined by counting the atoms in an isotopically enriched silicon crystal using isotope dilution mass spectrometry (ISMS).
Journal ArticleDOI
Silica on Silicon Carbide
Volker Presser,Klaus G. Nickel +1 more
TL;DR: In this paper, a review of state-of-the-art information about the structural aspects of silicon carbide, silica, and SiC-SiO 2 interfaces is presented.
Journal ArticleDOI
XPS analysis of nanostructured materials and biological surfaces
Donald R. Baer,Mark H. Engelhard +1 more
TL;DR: In this paper, the authors examined the types of information that XPS can provide about a variety of nanostructured materials, including elemental distributions, layer or coating structure and thicknesses, surface functionality, and even particles sizes on the 1-20nm scale.
References
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TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
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Tables of physical and chemical constants
G. W. C. Kaye,T. H. Laby +1 more
TL;DR: In this paper, the authors present a survey of the properties of inorganic compounds and their properties in general physics, including properties of solutions, properties of chemical bonds, and properties of nuclei.
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