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Nicolas Grandjean
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 626
Citations - 18787
Nicolas Grandjean is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 66, co-authored 617 publications receiving 17447 citations. Previous affiliations of Nicolas Grandjean include École Normale Supérieure & University of California, Santa Barbara.
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Journal ArticleDOI
Room-temperature polariton lasing in semiconductor microcavities.
Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Pavlos G. Lagoudakis,Alexey Kavokin,Jeremy J. Baumberg,Gabriel Christmann,Raphaël Butté,Eric Feltin,J.-F. Carlin,Nicolas Grandjean +10 more
TL;DR: Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/-5 degrees and spatial size around 5 microm.
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Temperature quenching of photoluminescence intensities in undoped and doped gan
Mathieu Leroux,Nicolas Grandjean,Bernard Beaumont,Gilles Nataf,Fabrice Semond,Jean Massies,Pierre Gibart +6 more
TL;DR: In this paper, the temperature behavior of various photoluminescence (PL) transitions observed in undoped, n-and p-doped GaN in the 9-300 K range is discussed.
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Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.
Mathieu Leroux,Nicolas Grandjean,M. Laügt,Jean Massies,Bernard Gil,Pierre Lefebvre,Pierre Bigenwald +6 more
TL;DR: In this paper, the authors show that the origin of the electric field is predominently due to spontaneous polarization effects rather than a piezoelectric effect in the well material and conclude that the GaN layers are nearly unstrained, whereas the (AI,Ga)N barriers are pseudomorphically strained on GaN.
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Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Raphaël Butté,J.-F. Carlin,Eric Feltin,M. Gonschorek,Sylvain Nicolay,Gabriel Christmann,D. Simeonov,A. Castiglia,J. Dorsaz,H. J. Buehlmann,Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Mauro Mosca,Mauro Mosca,C. Pinquier,C. Pinquier,M. A. Py,F. Demangeot,J. Frandon,Pavlos G. Lagoudakis,Jeremy J. Baumberg,Nicolas Grandjean +22 more
TL;DR: In this paper, the structural and optical properties of lattice-matching AlInN layers to GaN have been investigated and their specific use to realize nearly strain-free structures for photonic and electronic applications has been discussed.
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High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
TL;DR: In this article, room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field effect transistor heterostructure.