There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

As a fascinating conjugated polymer, graphitic carbon nitride (g-C3N4) has become a new research hotspot and drawn broad interdisciplinary attention as a metal-free and visible-light-responsive photocatalyst in the arena of solar energy conversion and environmental remediation. This is due to its appealing electronic band structure, high physicochemical stability, and “earth-abundant” nature. This critical review summarizes a panorama of the latest progress related to the design and construction of pristine g-C3N4 and g-C3N4-based nanocomposites, including (1) nanoarchitecture design of bare g-C3N4, such as hard and soft templating approaches, supramolecular preorganization assembly, exfoliation, and template-free synthesis routes, (2) functionalization of g-C3N4 at an atomic level (elemental doping) and molecular level (copolymerization), and (3) modification of g-C3N4 with well-matched energy levels of another semiconductor or a metal as a cocatalyst to form heterojunction nanostructures. The constructi...

Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal−oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.

/pdf/nanoscale-memristor-device-as-synapse-in-neuromorphic-1sl2njhdyu.pdf

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

The variation of resistive switching (RS) parameters is one of the major challenges to push resistive random access memory (RRAM) into application. In this paper, with a statistical methodology, for the first time we study the statistical distributions of set parameters of the Cu/HfO 2 /Pt based conductive bridge random access memory (CBRAM). The distributions of the set parameters in each off resistance range are shown to nicely fit a Weibull model. The Weibull slope and scale factor of the set voltage increase logarithmically with the geometric mean of off resistance in different ranges, which can be well explained by the cell-based percolation model of set statistics. And also for the first time, we revel that the Weibull slope of the set current decreases logarithmically with the off resistance. Our study is of significance to reduce the fluctuation of the resistive switching parameters.

Study of the set statistical characteristics in the Cu/HfO 2 /Pt-based RRAM device

A high-rate cathode material based on potassium-doped Na3V2(PO4)3 for high/low-temperature sodium-ion batteries

NbO2-based locally active memristors: from physical mechanisms to performance optimization

The invention discloses a layout design method for realizing a small-gap planar electrode. The layout design method comprises the following steps: designing a first photoetching layout graph and a mark graph; designing a second photoetching layout graph and a mark graph; adjusting the distance between the first photoetching layout graph and the second photoetching layout graph to form a series of gaps with different sizes. Through the optimized design of photoetching layout graphs, a small-size gap structure of photoetching registration precision can be realized and broken through, the alignment registration precision of the photoetching can be greatly improved, greatly practical significance is played for preparing the small-size gap structure, and the problem about poor precision in photoetching and alignment is solved.

Manufacturing method of small-gap planar electrode

Diazo probe-based chemical isotope labeling assisted liquid chromatography-tandem mass spectrometry analysis for sensitive determination of amino acids in biofluids.

Qi Liu

Papers

Study of the set statistical characteristics in the Cu/HfO 2 /Pt-based RRAM device

A high-rate cathode material based on potassium-doped Na3V2(PO4)3 for high/low-temperature sodium-ion batteries

NbO2-based locally active memristors: from physical mechanisms to performance optimization

Manufacturing method of small-gap planar electrode

Diazo probe-based chemical isotope labeling assisted liquid chromatography-tandem mass spectrometry analysis for sensitive determination of amino acids in biofluids.