Qi Liu

TL;DR: In this article, a self-gating resistance random access memory (SRSRA) unit is proposed, which consists of a stack structure, comprising multiple layers of lower conductive electrodes (301, 303); a vertical trench (401), formed by etching the stack structure; an M8XY6 gating layer (501), formed on the inner wall and the bottom of the vertical trench; a resistance transition layer (601), forming on the surface of the m8XY 6 gating layers; and upper conductive electrode (701), formed in the surface surface of

TL;DR: In this paper , the αVβ3 integrin expression is increased during prostate cancer progression toward neuroendocrine PrCa (NEPrCa), a highly aggressive and highly metastatic form of PrCa, for which there is no effective therapeutic approach.

TL;DR: A nonvolatile resistive switching memory includes an inert metal electrode, a resistive functional layer, and an easily oxidizable metal electrode as discussed by the authors, which is capable of controlling the metal ions, which are formed by the oxidation of the easily oxidisable metal electrode during the programming of the device, and only enter into the resistor through the position of the nanopores.

TL;DR: In this article, the anisotropic magnetoresistance (AMR) effect on the magnetic conductive filament (CF) is studied in order to find out the underlying nature of its transport.

TL;DR: Li-ion-based electrolyte-gated transistors (Li-EGTs) have been extensively studied as synaptic devices due to their potential to provide good analog switching of channel conductance, which is a desirable property for the emulation of synaptic weight modulation as mentioned in this paper .