Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
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Journal ArticleDOI
An overview of resistive random access memory devices
TL;DR: In this article, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed.
Journal ArticleDOI
Highly Stable Radiation-Hardened Resistive-Switching Memory
Yan Wang,Hangbing Lv,Wei Wang,Qi Liu,Shibing Long,Qin Wang,Zongliang Huo,Sen Zhang,Yingtao Li,Qingyun Zuo,Wentai Lian,Jianhong Yang,Ming Liu +12 more
TL;DR: In this paper, the resistive random access memory (RRAM) with metal-insulator-metal structure was investigated for the first time under radiation conditions, and the fabricated Cu-doped HfO2-based RRAM devices were found to have immunity from 60Co γ ray of various dose ranges.
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In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory
Jun Sun,Qi Liu,Hongwei Xie,Xing Wu,Feng Xu,Tao Xu,Shibing Long,Hangbing Lv,Yingtao Li,Litao Sun,Ming Liu +10 more
TL;DR: In this paper, the authors dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO2/Pt device and show that Ni is the main composition of the conductive filaments.
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miR-367 promotes epithelial-to-mesenchymal transition and invasion of pancreatic ductal adenocarcinoma cells by targeting the Smad7-TGF-β signalling pathway.
TL;DR: In this paper, the miR-367/Smad7-TGF-β pathway was identified and characterised, which is involved in the invasion and metastasis of pancreatic cancer cells.
Journal ArticleDOI
Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$ -Based ReRAM With a Cu Nanocrystal Insertion Layer
Qi Liu,Shibing Long,Wei Wang,Sansiri Tanachutiwat,Yingtao Li,Qin Wang,Manhong Zhang,Zongliang Huo,Junning Chen,Ming Liu +9 more
TL;DR: In this paper, the insertion of a Cu nanocrystal (NC) layer between the Pt electrode and ZrO2 film is proposed as an effective method to improve resistive switching properties in the ZRO2-based resistive memory.