Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
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Sonication assisted preparation of graphene oxide/graphitic-C3N4 nanosheet hybrid with reinforced photocurrent for photocatalyst applications
TL;DR: By making use of the substrate character of GO, g-C3N4 nanosheets of unvaried intrinsic structure were exfoliated and anchored on the GO surface, resulting in a GO/g-C 3N4 hybrid, and the corresponding photocatalytic performance of the hybrid with optimized photocurrent character was largely improved.
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Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory
Sen Liu,Nianduan Lu,Nianduan Lu,Xiaolong Zhao,Xiaolong Zhao,Hui Xu,Writam Banerjee,Writam Banerjee,Hangbing Lv,Hangbing Lv,Shibing Long,Shibing Long,Qingjiang Li,Qi Liu,Qi Liu,Ming Liu,Ming Liu +16 more
TL;DR: Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament into the Pt electrode, and the CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer.
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Graphene and Related Materials for Resistive Random Access Memories
TL;DR: Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs) as mentioned in this paper, and the performance of a number of RRAM prototypes using GRMs is summarized Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media.
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Multilevel resistive switching with ionic and metallic filaments
TL;DR: In this article, a resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ZrO 2/n+-Si structure.