There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

As a fascinating conjugated polymer, graphitic carbon nitride (g-C3N4) has become a new research hotspot and drawn broad interdisciplinary attention as a metal-free and visible-light-responsive photocatalyst in the arena of solar energy conversion and environmental remediation. This is due to its appealing electronic band structure, high physicochemical stability, and “earth-abundant” nature. This critical review summarizes a panorama of the latest progress related to the design and construction of pristine g-C3N4 and g-C3N4-based nanocomposites, including (1) nanoarchitecture design of bare g-C3N4, such as hard and soft templating approaches, supramolecular preorganization assembly, exfoliation, and template-free synthesis routes, (2) functionalization of g-C3N4 at an atomic level (elemental doping) and molecular level (copolymerization), and (3) modification of g-C3N4 with well-matched energy levels of another semiconductor or a metal as a cocatalyst to form heterojunction nanostructures. The constructi...

Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal−oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.

/pdf/nanoscale-memristor-device-as-synapse-in-neuromorphic-1sl2njhdyu.pdf

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Phycocyanin (PC), a natural algal protein, is reported for having anti-oxidant and antiinflammatory properties. We investigated its ability to attenuate lung inflammation in mice subjected to X-ray radiation. Male C57BL/6 mice were assigned to the control, total body irradiation, PC pretreatment, and PC treatment groups. Mice in the PC pretreatment group were gavaged with 200 mg/kg PC for 7 consecutive days before irradiation, and those in the PC treatment group were gavaged with 200 mg/kg PC for 7 consecutive days after irradiation. Lungs were collected on Day 7 after irradiation exposure. Hematoxylin and eosin staining of mouse lung sections showed considerable inflammation damage 7 days after irradiation compared with the control lung but a reduction in pathological injury in the PC treatment group. Pretreatment or treatment with PC significantly decreased levels of interleukin-6 and tumor necrosis factor-α in the lung, and also increased the relative mRNA expression of superoxide dismutase and glutathione. In vivo, PC significantly reduced the expression of Toll-like receptor TLR2, myeloid differentiation primary response Myd88, and nuclear factor NF-κB, at both the transcriptional and translation level. Taken together, these data indicated that PC attenuated lung inflammatory damage induced by radiation by blocking the TLR2-MyD88-NF-κB signaling pathway. Therefore, PC could be a protective agent against radiation-induced inflammatory damage in normal tissues.

http://ir.yic.ac.cn/bitstream/133337/24869/1/Phycocyanin%20attenuates%20X-ray-induced%20pulmonary%20inflammation%20via%20the%20TLR2-MyD88-NF-kappa%20B%20signaling%20pathway.pdf

Phycocyanin attenuates X-ray-induced pulmonary inflammation via the TLR2-MyD88-NF-κB signaling pathway

The invention relates to the technical field of micro electronic techniques and memory devices, and discloses a resistive random access memory device with a rectification characteristic and a manufacturing method of the resistive random access memory device. The resistive random access memory device structurally comprises a lower electrode, an upper electrode and a resistive random access memory layer arranged between the lower electrode and the upper electrode. The resistive random access memory device is simple in structure and preparation technology and low in manufacturing cost, has the rectification characteristic in a low resistance state, and can effectively restrain the reading crosstalk problem.

Resistive random access memory device with rectification characteristic and manufacturing method thereof

A palladium-catalyzed C–O bond formation reaction between phenols and allenylic carbonates to give 2,3-allenic aromatic ethers with decent to excellent yields under mild reaction conditions has been described. A variety of synthetically useful functional groups are tolerated and the synthetic utility of this method has been demonstrated through a series of transformations of the allene moiety. By applying this reaction as the key step, the total syntheses of naturally occurring allenic aromatic ethers, eucalyptene and terricollene A (first synthesis; 4.5 g gram scale), have been accomplished.

/pdf/a-palladium-catalyzed-approach-to-allenic-aromatic-ethers-3jo4j5ih89.pdf

A palladium-catalyzed approach to allenic aromatic ethers and first total synthesis of terricollene A

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

The invention relates to the technical fields of the microelectronic technology and memory devices, and discloses a method for reducing the Reset current of an RRAM device The RRAM device comprises a bottom electrode, a resistive memory layer and a top electrode sequentially from the bottom up The Reset current refers to the current required by the transition of the RRAM device from a low impedance state to a high impedance state According to the method, a thermal protective layer is inserted between the bottom electrode and the resistive memory layer, and/or between the resistive memory layer and the top electrode, and used for reducing the heat loss of the RRAM device in the transition process from the low impedance state to the high impedance state, and then the Reset current of the RRAM device is reduced The method has the advantages that the heat loss of the RRAM device can be reduced effectively in the Reset process through adding the thermal protective layer, so that the Reset current of the device is reduced

Qi Liu

Papers

Phycocyanin attenuates X-ray-induced pulmonary inflammation via the TLR2-MyD88-NF-κB signaling pathway

Resistive random access memory device with rectification characteristic and manufacturing method thereof

A palladium-catalyzed approach to allenic aromatic ethers and first total synthesis of terricollene A

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Method for reducing Reset current of RRAM (resistive random access memory) device