Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
Papers
More filters
Journal ArticleDOI
Atomic View of Filament Growth in Electrochemical Memristive Elements
Hangbing Lv,Xiaoxin Xu,Pengxiao Sun,Hongtao Liu,Qing Luo,Qi Liu,Writam Banerjee,Haitao Sun,Shibing Long,Ling Li,Ming Liu +10 more
TL;DR: Refined programming scheme with real-time current regulation was proposed to study the detailed information on the filament growth, and a clear picture of filament growth from atomic view could be drawn to account for the resistance modulation of oxide electrolyte based electrochemical memristive elements.
Journal ArticleDOI
Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
Rongrong Cao,Qi Liu,Ming Liu,Bing Song,Dashan Shang,Yang Yang,Qing Luo,Shuyu Wu,Li Yue,Yan Wang,Hangbing Lv +10 more
TL;DR: In this article, the authors improved the endurance property of Hf0.5Zr 0.5O2(HZO) based ferroelectric capacitors using Ru electrodes.
Journal ArticleDOI
Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition
Fei Huang,Xing Chen,Xiao Liang,Jun Qin,Yan Zhang,Taixing Huang,Zhuo Wang,Bo Peng,Peiheng Zhou,Haipeng Lu,Li Zhang,Longjiang Deng,Ming Liu,Qi Liu,He Tian,Lei Bi +15 more
TL;DR: A systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition and domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism.
Journal ArticleDOI
Resistive switching characteristics of MnOx-based ReRAM
TL;DR: In this paper, the resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications, and the experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.
Journal ArticleDOI
High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga 2 O 3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes
Yuan Qin,Haiding Sun,Shibing Long,Gary S. Tompa,Tom Salagaj,Hang Dong,Qiming He,Guangzhong Jian,Qi Liu,Hangbing Lv,Ming Liu +10 more
TL;DR: In this article, a high performance solar-blind photodetector (SBPD) with asymmetric Schottky electrodes was presented, which was heteroepitaxially grown on sapphire by metal-organic chemical vapor deposition (MOCVD).