Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
Papers
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Journal ArticleDOI
Composition-Dependent Ferroelectric Properties in Sputtered Hf X Zr 1−X O 2 Thin Films
Qing Luo,Haili Ma,Hai-Lei Su,Kan-Hao Xue,Rongrong Cao,Zhaomeng Gao,Jie Yu,Tiancheng Gong,Xiaoxin Xu,Jiahao Yin,Peng Yuan,Lu Tai,Danian Dong,Shibing Long,Qi Liu,Xiangshui Miao,Hangbing Lv,Ming Liu +17 more
TL;DR: In this article, sputtered HfXZr1−XO2 thin films were studied with different Zr contents (from 12.49 to 20.34 mol%) by varying the sputtering power ratio of ZrO2 to HfO2.
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Resistive Switching: Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM (Adv. Mater. 14/2012)
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Ni-Mo-Cr alloy corrosion in molten NaCl-KCl-MgCl2 salt and vapour
TL;DR: In this paper, the corrosion properties of Ni-Mo-Cr alloy samples immersed in NaCl-KCl-MgCl2 salt and vapour were investigated at 700.0 °C for 100 h. The surface layer of the corroded alloy in liquid molten salt exhibited slight Cr depletion.
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Recent progress of integrated circuits and optoelectronic chips
Yue Hao,Shuiying Xiang,Genquan Han,Jincheng Zhang,Xiaohua Ma,Zhangming Zhu,Xingxing Guo,Yahui Zhang,Yanan Han,Ziwei Song,Yan Liu,Ling Yang,Hong Zhou,Jiangyi Shi,Wei Zhang,Min Xu,Weisheng Zhao,Biao Pan,Yangqi Huang,Qi Liu,Yimao Cai,Jian Zhu,Xin Ou,Tiangui You,Huaqiang Wu,Bin Gao,Zhiyong Zhang,Guo-Ping Guo,Yonghua Chen,Yong Liu,Xiangfei Chen,Chunlai Xue,Xingjun Wang,Lixia Zhao,Xihua Zou,Lianshan Yan,Ming Li +36 more
TL;DR: In this article, the authors reviewed the recent progress of integrated circuits and optoelectronic chips and focused on the research status, technical challenges and development trend of devices, chips, and integrated technologies of typical IC and Optoelectronics chips.
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Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM
Rongrong Cao,Sen Liu,Qi Liu,Xiaolong Zhao,Wei Wang,Xumeng Zhang,Facai Wu,Quantan Wu,Yan Wang,Hangbing Lv,Shibing Long,Ming Liu +11 more
TL;DR: In this article, a back-end-of-line (BEOL) compatible TiN barrier layer was proposed to improve the device reliability in CBRAM devices by eliminating the nano-filament overgrowth phenomenon and negative-SET behavior.