Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
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An ovonic threshold switching selector based on Se-rich GeSe chalcogenide
TL;DR: In this paper, an ovonic threshold switching (OTS) selector with simply binary GeSe has been demonstrated, where Se-rich GeSe was chosen as the dielectric layer and annealing process was attempted to reduce defect quantity and enhance atomic structure stability.
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Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
Facai Wu,Shuyao Si,Peng Cao,Wei Wei,Xiaolong Zhao,Xiaolong Zhao,Xiaolong Zhao,Tuo Shi,Tuo Shi,Xumeng Zhang,Xumeng Zhang,Jianwei Ma,Rongrong Cao,Rongrong Cao,Lei Liao,Tseung-Yuen Tseng,Qi Liu,Qi Liu +17 more
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Chemical composition and oxidative evolution of Sacha Inchi (Plukentia volubilis L.) oil from Xishuangbanna (China)
TL;DR: Sacha Inchi oil was studied for physicochemical characteristics, chemical composition, radical scavenging activity and storage stability as mentioned in this paper, which showed relatively good storage stability after twelve months of storage.
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,Hsp Wong,Eric Pop,Daniele Ielmini,Dmitri B. Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: In this article, the most recommendable methodologies for the fabrication, characterization, and simulation of resistive switching (RS) devices, as well as the proper methods to display the data obtained, are described.
Journal ArticleDOI
Ion-Gated Transistor: An Enabler for Sensing and Computing Integration
TL;DR: The essential operation principles, device structures, and electrical characteristics of IGT are introduced, and the recent developments in biosensors, neuromorphic computing, and intelligent sensors with near‐sensor computing and in‐s sensor computing modes are summarized.