Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
Papers
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Journal ArticleDOI
Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application
Xiaolong Zhao,Xiaolong Zhao,Jiebin Niu,Yang Yang,Xiangheng Xiao,Rui Chen,Zuheng Wu,Ying Zhang,Hangbing Lv,Shibing Long,Qi Liu,Changzhong Jiang,Ming Liu +12 more
TL;DR: This work proposes a novel strategy to realize nonvolatile storage characteristics in a volatile TS device by modulating the rupture degree of conductive filament (CF), which can act as a potential supplement of novel storage class memories.
Proceedings ArticleDOI
Scaling MoS 2 NCFET to 83 nm with Record-low Ratio of SS ave /SS Ref .=0.177 and Minimum 20 mV Hysteresis
Guanhua Yang,Jiebin Niu,Congyan Lu,Rongrong Cao,Jiawei Wang,Ying Zhao,Xichen Chuai,Mengmeng Li,Geng Di,Nianduan Lu,Qi Liu,Ling Li,Ming Liu +12 more
TL;DR: In this article, the authors experimentally prove that MoS 2 negative-capacitance field effect transistor (NCFET) can benefit from device scaling without suffering from hysteresis.
Proceedings ArticleDOI
Convertible Volatile and non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor
Zuheng Wu,Xumeng Zhang,Tuo Shi,Yongzhou Wang,Rong Wang,Jian Lu,Jinsong Wei,Peiwen Zhang,Qi Liu +8 more
TL;DR: In this article, a multi-functional self-rectifying memristor (Pt/TiO x /Ti) is fabricated, which shows convertible volatile and non-volatile resistive switching.
Journal ArticleDOI
Characterization of oxygen impurity in silicon nitride storage layer: A first‐principles investigation
TL;DR: In this paper, the authors carried out a comprehensive study of substitutional oxygen defects in hexagonal silicon nitride (β-Si3N4) and found that substitutional oxygens tend to form clusters at three different sites due to the intensive attractive interaction.
Proceedings ArticleDOI
Formation and annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO 2 :Cu/Pt ReRAM
TL;DR: The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state, and it is proposed that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.