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Qi Liu

Researcher at Fudan University

Publications -  494
Citations -  16543

Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.

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Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

TL;DR: In this article, the reproducible nonpolar resistive switching behavior is reported in the Cu-doped ZrO2 memory devices, with the sandwiched structure of Cu/ZrO 2:Cu/Pt. The switching mechanism is believed to be related with the formation and rupture of conducting filamentary paths.
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Resistive switching memory effect of ZrO2 films with Zr+ implanted

TL;DR: In this paper, the authors investigated the impact of implanted Zr+ ions on resistive switching performances of ZrO2-implanted ZRO2 films and found that ZR+ ions exhibit good retention characteristics and high device yield.
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An Artificial Neuron Based on a Threshold Switching Memristor

TL;DR: This letter demonstrates an integration-and-fire artificial neuron based on a Ag/SiO2/Au threshold switching memristor that can realize the basic functions of spiking neurons and has great potential for neuromorphic computing.
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Vacancy-Induced Synaptic Behavior in 2D WS 2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing.

TL;DR: High-performance and low-power consumption memristors based on 2D WS2 with 2H phase are demonstrated, which show fast ON (OFF) switching times, low program current in the ON state, and SET (RESET) energy reaching the level of femtojoules.