Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
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Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
Qing Luo,Xumeng Zhang,Yuan Hu,Tiancheng Gong,Xiaoxin Xu,Peng Yuan,Haili Ma,Danian Dong,Hangbing Lv,Shibing Long,Qi Liu,Ming Liu +11 more
TL;DR: In this article, a self-rectifying resistive-switching (RS) random access memory device with high uniformity and low operation voltage (109) characteristics is presented, which is one of the most promising solutions to overcome the sneaking current issue in a 3D vertical crossbar array.
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A Habituation Sensory Nervous System with Memristors
Zuheng Wu,Jikai Lu,Jikai Lu,Tuo Shi,Xiaolong Zhao,Xumeng Zhang,Yang Yang,Facai Wu,Yue Li,Qi Liu,Ming Liu +10 more
TL;DR: The results provide that a direct emulation of the biologically inspired learning process by memristors could be a sound choice for neuromorphic hardware implementation.
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Graphene oxide capturing surface-fluorinated TiO2 nanosheets for advanced photocatalysis and the reveal of synergism reinforce mechanism
TL;DR: It is found that enhanced electron-hole separation has been the key issue for the reinforcement of photocatalytic performance and hybridization of F-TiO2 with GO could further increase the photoelectrochemical current.
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Ultrahigh drive current and large selectivity in GeS selector.
Shujing Jia,Huanglong Li,Tamihiro Gotoh,Christophe Longeaud,Bin Zhang,Juan Lyu,Shilong Lv,Min Zhu,Zhitang Song,Qi Liu,John Robertson,Ming Liu +11 more
TL;DR: A selector with a large drive current density of 34 MA cm−2 and a ~106 high nonlinearity, realized in an environment-friendly and earth-abundant sulfide binary semiconductor, GeS, reveals a Ge pyramid-dominated network and high density of near-valence band trap states in amorphous GeS.
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Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming
TL;DR: In this article, a gate voltage ramping (GVR) scheme was proposed to improve the uniformity of RRAM in a one transistor and one resistor structure, where the gate voltage V G is ramped and the source/drain are kept constant.