Q
Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
Papers
More filters
Journal ArticleDOI
HfO 2 -Based Highly Stable Radiation-Immune Ferroelectric Memory
Fei Huang,Yan Wang,Xiao Liang,Jun Qin,Yan Zhang,Xiufang Yuan,Zhuo Wang,Bo Peng,Longjiang Deng,Qi Liu,Lei Bi,Ming Liu +11 more
TL;DR: In this article, HfO2-based ferroelectric random access memory (FeRAM) with metal-insulator-metal structure is studied for the first time under radiation conditions.
Journal ArticleDOI
Investigation of resistive switching behaviours in WO3-based RRAM devices
Yingtao Li,Yingtao Li,Shibing Long,HangBing Lü,Qi Liu,Qin Wang,Yan Wang,Yan Wang,Sen Zhang,Wentai Lian,Su Liu,Ming Liu +11 more
TL;DR: In this paper, a resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature.
Journal ArticleDOI
Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures
Yingtao Li,Yingtao Li,Shibing Long,Qi Liu,Qin Wang,Manhong Zhang,Hangbing Lv,Lubing Shao,Yan Wang,Yan Wang,Sen Zhang,Qingyun Zuo,Su Liu,Ming Liu +13 more
TL;DR: In this article, the multilevel storage properties of the Cu/WO3/Pt structure devices are demonstrated, which can be attributed to the combination of the radial growth of filaments and the formation of more conductive filaments when applying a higher compliance current during the set process.
Journal ArticleDOI
Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell
Shibing Long,Qi Liu,Hangbing Lv,Yingtao Li,Yan Wang,Sen Zhang,Wentai Lian,Kangwei Zhang,Ming Wang,Hongwei Xie,Ming Liu +10 more
TL;DR: In this article, the authors investigated the resistive switching mechanism of zirconium oxide-based resistive random access memory (RRAM) devices composed of Cu-doped ZrO2 film sandwiched between an oxidizable electrode and an inert electrode.
Journal ArticleDOI
Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation
Guoming Wang,Guoming Wang,Shibing Long,Zhaoan Yu,Meiyun Zhang,Tianchun Ye,Yang Li,Dinglin Xu,Hangbing Lv,Qi Liu,Ming Wang,Xiaoxin Xu,Hongtao Liu,Baohe Yang,Jordi Suñé,Ming Liu +15 more
TL;DR: In this article, a width-adjusting pulse operation (WAPO) method was proposed for improving the uniformity and endurance of resistive random access memory (RRAM) devices.