S
Shashank Gupta
Researcher at Stanford University
Publications - 56
Citations - 1543
Shashank Gupta is an academic researcher from Stanford University. The author has contributed to research in topics: Germanium & Laser. The author has an hindex of 17, co-authored 52 publications receiving 1213 citations. Previous affiliations of Shashank Gupta include Applied Materials & Katholieke Universiteit Leuven.
Papers
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Journal ArticleDOI
A Comparative Study of Different Physics-Based NBTI Models
Souvik Mahapatra,Nilesh Goel,Sujay B. Desai,Shashank Gupta,B. Jose,Subhadeep Mukhopadhyay,K. Joshi,Ankit Jain,Ahmad E. Islam,Muhammad A. Alam +9 more
TL;DR: In this article, different physics-based negative bias temperature instability (NBTI) models as proposed in the literature are reviewed, and the predictive capability of these models is benchmarked against experimental data.
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Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts
Ashish Agrawal,J. C. Lin,Michael Barth,Ryan M. White,Bo Zheng,Saurabh Chopra,Shashank Gupta,Ke Wang,Jerry Gelatos,Suzanne E. Mohney,Suman Datta +10 more
TL;DR: In this paper, the effect of reduction of ultrathin TiO2 by Ti and its effect on Fermi level depinning and contact resistivity reduction to Si is experimentally studied.
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56 Gb/s Germanium Waveguide Electro-Absorption Modulator
S. A. Srinivasan,Marianna Pantouvaki,Shashank Gupta,Hongtao Chen,Peter Verheyen,Guy Lepage,Gunther Roelkens,Krishna C. Saraswat,Dries Van Thourhout,Philippe Absil,Joris Van Campenhout +10 more
TL;DR: In this paper, a waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz is reported, which is implemented in a fully integrated Si photonics platform on 200mm silicon-on-insulator wafers with 220nm top Si thickness.
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Low-threshold optically pumped lasing in highly strained germanium nanowires.
Shuyu Bao,Daeik Kim,Chibuzo Onwukaeme,Shashank Gupta,Krishna C. Saraswat,Kwang Hong Lee,Yeji Kim,Dabin Min,Yongduck Jung,Haodong Qiu,Hong Wang,Eugene A. Fitzgerald,Chuan Seng Tan,Chuan Seng Tan,Donguk Nam,Donguk Nam +15 more
TL;DR: A low-threshold, compact group IV laser is demonstrated that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium, allowing the observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm−2.
Journal ArticleDOI
Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
Shashank Gupta,Prashanth Paramahans Manik,R. K. Mishra,Aneesh Nainani,Mathew Abraham,Saurabh Lodha +5 more
TL;DR: In this article, a physics-based approach for Fermi-level pinning in metal-semiconductor contacts has been extended to metal-interfacial layer (IL)-semiconductors (MIS) contacts.