Low-threshold optically pumped lasing in highly strained germanium nanowires.
Shuyu Bao,Daeik Kim,Chibuzo Onwukaeme,Shashank Gupta,Krishna C. Saraswat,Kwang Hong Lee,Yeji Kim,Dabin Min,Yongduck Jung,Haodong Qiu,Hong Wang,Eugene A. Fitzgerald,Chuan Seng Tan,Chuan Seng Tan,Donguk Nam,Donguk Nam +15 more
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TLDR
A low-threshold, compact group IV laser is demonstrated that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium, allowing the observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm−2.Abstract:
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavourable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be a successful demonstration of lasing from this seemingly promising material system. Here we demonstrate a low-threshold, compact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently overcome optical losses at 83 K, thus allowing the observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm−2. Our demonstration opens new possibilities for group IV lasers for photonic-integrated circuits. Integrating group IV lasing devices into technologically relevant CMOS architectures has proven challenging. Here, the authors demonstrate low-threshold lasing, which is important for potential electronic and photonic circuits, using strained germanium nanowires as the gain material.read more
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Nanowire Electronics: From Nanoscale to Macroscale
TL;DR: A comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics, including a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics.
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Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications.
TL;DR: This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques.
Journal ArticleDOI
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Anas Elbaz,Anas Elbaz,Dan Buca,Nils von den Driesch,Nils von den Driesch,Konstantinos Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,Sébastien Sauvage,Isabelle Sagnes,Antonino Foti,Razvigor Ossikovski,Jean-Michel Hartmann,Frederic Boeuf,Zoran Ikonic,Philippe Boucaud,Detlev Grützmacher,Detlev Grützmacher,Moustafa El Kurdi +20 more
TL;DR: In this article, a tensile strain was applied to a 300nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, to transform it into a direct-band gap semiconductor that supports lasing.
Journal ArticleDOI
Germanium-based integrated photonics from near- to mid-infrared applications
Delphine Marris-Morini,Vladyslav Vakarin,Joan Manel Ramirez,Qiankun Liu,Andrea Ballabio,Jacopo Frigerio,Miguel Montesinos,Carlos Alonso-Ramos,Xavier Le Roux,Samuel Serna,Daniel Benedikovic,Daniel Chrastina,Laurent Vivien,Giovanni Isella +13 more
TL;DR: Germanium has played a key role in silicon photonics as an enabling material for datacom applications as discussed by the authors, and the unique properties of Ge have been leveraged to develop high performance integrated photodectors, which are now mature devices.
Journal ArticleDOI
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Anas Elbaz,Dan Buca,N. von den Driesch,K. Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,S. Sauvage,I. Sagnes,Antonino Foti,Razvigor Ossikovski,J.M. Hartmann,Frederic Boeuf,Zoran Ikonic,P. Boucaud,Detlev Grützmacher,M. El Kurdi +17 more
TL;DR: In this article, a 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band gap semiconductor.
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