International Symposium on Power Semiconductor Devices and IC's 

About: International Symposium on Power Semiconductor Devices and IC's is an academic conference. The conference publishes majorly in the area(s): Power semiconductor device & Breakdown voltage. Over the lifetime, 3147 publications have been published by the conference receiving 41135 citations.

Impact of digital control in power electronics

Abstract: In this paper, we discuss the impact of digital control in high-frequency switched-mode power supplies (SMPS), including point-of-load and isolated DC-DC converters, microprocessor power supplies, power-factor-correction rectifiers, electronic ballasts, etc., where switching frequencies are typically in the hundreds of kHz to MHz range, and where high efficiency, static and dynamic regulation, low size and weight, as well as low controller complexity and cost are very important. To meet these application requirements, a digital SMPS controller may include fast, small analog-to-digital converters, hardware-accelerated programmable compensators, programmable digital modulators with very fine time resolution, and a standard microcontroller core to perform programming, monitoring and other system interface tasks. Based on recent advances in circuit and control techniques, together with rapid advances in digital VLSI technology, we conclude that high-performance digital controller solutions are both feasible and practical, leading to much enhanced system integration and performance gains. Examples of experimentally demonstrated results are presented, together with pointers to areas of current and future research and development.

A review of RESURF technology

Abstract: RESURF (Reduced Surface Field) technology is one of the most widely-used methods for the design of lateral high-voltage, low on-resistance devices. The technique has allowed the integration of HV devices, ranging from 20 V to 1200 V, with bipolar and MOS transistors. A technical review is given on the technology as developed during the last 20 years. The paper discusses the invention and its application in discrete devices, in Junction-Isolated IC's and SOI, and as Multiple Resurf. It includes an evaluation of topics like breakdown, on-resistance, high-side and high-current effects and reliability.

The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

Abstract: By a vertical shrink of the NPT IGBT to a structure with a thin n/sup -/ base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the combination of the field stop concept with a trench transistor cell results in the almost ideal carrier concentration for a device with minimum on state voltage and lowest switching losses.

COOLMOS/sup TM/-a new milestone in high voltage power MOS

Abstract: Recently, a new technology for high voltage power MOSFETs has been introduced: the CoolMOS/sup TM/. Based on the new device concept of charge compensation, the R/sub DS(on)/ area product for e.g. 600 V transistors has been reduced by a factor of 5. The devices show no bipolar current contribution like the well known tail current observed during the turn-off phase of IGBTs. CoolMOS/sup TM/ virtually combines the low switching losses of a MOSFET with the on-state losses of an IGBT. Furthermore, the dependence of R/sub DS(on)/ on the breakdown voltage has been redefined. The more than square-law dependence in the case of standard MOSFET has been broken and a linear voltage dependence achieved. This opens the way to new fields of application even without avalanche operation. System miniaturization, higher switching frequencies, lower circuit parasitics, higher efficiency, and reduced system costs are pointing the way towards future developments. Not only has the new technology achieved breakthrough at reduced R/sub DS(on)/ values, but new benchmarks have also been set for the device capacitances. Due to chip shrinkage and a novel internal structure, the technology shows both a very small input capacitance and a strongly nonlinear output capacitance. The drastically lower gate charge facilitates and reduces the cost of controllability, and the smaller feedback capacitance reduces the dynamic losses. With this new technology, the minimum R/sub DS(on)/ values in all packages are being redefined in the important 600-1000 V categories.

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

Abstract: Since Cree, Inc.'s 2 nd generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (R ON, SP ) of 5 mΩ·cm 2 for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission applications. Using these next-generation SiC MOSFETs, we have now achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV with a R ON, SP as low as 2.3 mΩ·cm 2 for a breakdown voltage (BV) of 1230 V and 900 V-rating, 2.7 mΩ·cm 2 for a BV of 1620 V and 1200 V-rating, 3.38 mΩ·cm 2 for a BV of 1830 V and 1700 V-rating, 10.6 mΩ·cm 2 for a BV of 4160 V and 3300 V-rating, 123 mΩ·cm 2 for a BV of 12 kV and 10 kV-rating, and 208 mΩ·cm 2 for a BV of 15.5 kV and 15 kV-rating. In addition, due to the lack of current tailing during the bipolar device switching turn-off, the SiC MOSFETs reported in this work exhibit incredibly high frequency switching performance over their silicon counter parts.