Institution
Ahi Evran University
Education•Kırşehir, Turkey•
About: Ahi Evran University is a education organization based out in Kırşehir, Turkey. It is known for research contribution in the topics: Density functional theory & Ab initio. The organization has 842 authors who have published 2270 publications receiving 21904 citations.
Topics: Density functional theory, Ab initio, HOMO/LUMO, Molecule, Adsorption
Papers published on a yearly basis
Papers
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TL;DR: In this article, aryldisulfonamides were synthesized and characterized by FTIR, 1 H NMR, 13 C NMR and HETCOR, COSY, LC-MS and elemental analysis techniques.
21 citations
TL;DR: In this article, self-consistent band calculations on four compounds of the L 1 2 structure are presented, and the elastic constants (C 11, C 12 and C 44 ) for ScX 3 (X=Ir, Pd, Pt and Pd) compounds are calculated using the energy-strain method.
21 citations
TL;DR: In this article, an ab initio constant pressure technique is applied to study the pressure-induced phase transition in AlN and a first-order phase transformation from the wurtzite structure to a rocksalt structure is observed in the constant pressure simulations.
21 citations
TL;DR: Type IIB muscle fiber numbers of Morkaraman sheep were higher than those of other breeds in LD muscle and the relationship with some meat quality traits in Longissimus dorsi and Semitendinosus muscles from lambs of some Turkish native sheep breeds was investigated.
21 citations
TL;DR: In this article, a linear relation between the deformation potential and interface roughness (IFR) scattering is pointed out for the investigated samples, which may lead to a better understanding of the mechanism of IFR scattering.
Abstract: Hall effect measurements on unintentionally doped Al0.25Ga0.75N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20–300 K) and magnetic field (0–1.4 T). Magnetic-field-dependent Hall data are analyzed using the quantitative mobility spectrum analysis (QMSA) technique. The QMSA technique successfully separated electrons in the 2D electron gas (2DEG) at the Al0.25Ga0.75N/GaN interface from other 2D and 3D conduction mechanisms of the samples. 2DEG mobilities, carrier densities and conductivities of the investigated samples are compared at room temperature and low temperature (20 K). For a detailed investigation of the 2DEG-related growth parameters, the scattering analyses of the extracted 2DEG were carried out for all of the samples. Using the results of the scattering analyses, the relation between the growth and scattering parameters was investigated. Increments in the interface roughness (IFR) are reported with the increased GaN buffer growth temperatures. In addition, a linear relation between the deformation potential and interface roughness (IFR) scattering is pointed out for the investigated samples, which may lead to a better understanding of the mechanism of IFR scattering.
21 citations
Authors
Showing all 905 results
| Name | H-index | Papers | Citations |
|---|---|---|---|
| Mustafa Kurt | 38 | 132 | 4293 |
| Mecit Halil Oztop | 25 | 104 | 1714 |
| Erdal Eren | 23 | 42 | 1913 |
| Vagif S. Guliyev | 23 | 162 | 2036 |
| Abdullah Yildiz | 23 | 90 | 1288 |
| İlbilge Dökme | 21 | 58 | 1416 |
| Onder Onguru | 21 | 106 | 1285 |
| Galip Zihni Sanus | 20 | 67 | 1175 |
| Kasim Yildirim | 19 | 123 | 1222 |
| Serkan Demirci | 18 | 42 | 912 |
| Hatice Rana Erdem | 18 | 83 | 1231 |
| Murat Durandurdu | 17 | 99 | 1099 |
| Yusuf Erdogdu | 17 | 57 | 865 |
| Gokhan Surucu | 17 | 72 | 758 |
| Atilla Icli | 17 | 51 | 722 |