Telcordia Technologies

About: Telcordia Technologies is a based out in . It is known for research contribution in the topics: Network packet & Node (networking). The organization has 3097 authors who have published 4737 publications receiving 237882 citations.

GaInAsP lateral current injection lasers on semi-insulating substrates

Abstract: GaInAsP lateral current injection lasers have been fabricated on semi-insulating InP substrates. The lasers exhibit good lasing characteristics such as 10 mA threshold current, 10 mW maximum cw output power, and cw oscillation up to 70/spl deg/C. The laser has very low capacitance of 0.5 pF at zero bias voltage. This performance shows, for the first time, that the lateral current injection laser is a promising candidate for OEIC light sources. >

Background extraction in a video picture

Abstract: A novel video object extraction has a first object 12, such as a foreground object, illuminated with visible light 16 and a second object 14, such as a background object, illuminated with a combination of infrared 18 and visible light 16. A novel camera system observes the scene. The novel camera system includes an infrared light camera 24 and a visible light camera 20. The infrared light camera output 24 contains bright images of the second object 14, with relatively little brightness of the first object 12. The signal from this infrared light camera 20, once thresholded, serves as a key to remove the second object 14 from the video image captured by the visible light camera 20.

Method of making a laminated lithium-ion rechargeable battery cell

Abstract: Li-ion rechargeable battery cell electrode and electrolyte/separator elements formulated as layers of plasticized polymeric matrix compositions are laminated with electrically conductive collector elements to form a unitary battery cell structure. Adhesion between the electrode and collector elements is enhanced by pretreatment of the collector elements in which a 0.25% to 3.0% solution of a polymeric material compatible with said matrix polymer is applied to a collector foil or grid and dried to form a coated film, and the resulting coated collector element is heated within the range of about 250° to 450° C. for about 5 to 60 seconds.

Advances in the management and control of optical Internet

Abstract: Given the ever increasing demand for network bandwidth, and the phenomenal advances in optical wavelength division multiplexing (WDM) networking technologies, a major component of the next generation Internet will be an Internet protocol (IP)-based optical WDM network. As IP over WDM networking technologies mature, a number of important architectural, management and control issues have surfaced. These issues need to be addressed before a true next generation optical Internet can emerge. We enumerate some of the key architectural, management and control issues and discuss corresponding approaches and advances made toward addressing these issues. We first review the different IP/WDM networking architectural models and their tradeoffs. We outline and discuss several management and control issues and corresponding approaches related to the configuration, fault, and performance management of IP over dynamic WDM networks. We present an analysis and supporting simulation results demonstrating the potential benefits of dynamic IP over WDM networks. We then discuss the issues related to IP/WDM traffic engineering in more detail, and present the approach taken in the NGI SuperNet Network Control and Management Project funded by DARPA. In particular, we motivate and present an innovative integrated traffic-engineering framework for reconfigurable IP/WDM networks. It builds on the strength of multiprotocol label switching for fine-grain IP load balancing, and on the strength of reconfigurable WDM networking for reducing the IP network's weighted-hop-distance, and for expanding the bottleneck bandwidth.

Method for making tapered microminiature silicon structures

Abstract: Tapered silicon structures, of interest for use, e.g., in atomic force microscopes, in field-emission devices, and in solid state devices are made using silicon processing technology. Resulting tapered structures have, at their tip, a radius of curvature of 10 nanometers or less. Such preferred silicon structures are particularly suited as electron emitters in display devices.