scispace - formally typeset
Search or ask a question
Institution

Telcordia Technologies

About: Telcordia Technologies is a based out in . It is known for research contribution in the topics: Network packet & Node (networking). The organization has 3097 authors who have published 4737 publications receiving 237882 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480°C were investigated by applying high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x-rays in the scanning TEM and Rutherford backscattering spectrometry.
Abstract: The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x-rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480°C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni3GaAs. Ternary phases of the type PdxGaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M-Ga-As thin-film phase diagrams. The behavior of a thin (1–2 nm) native oxide-hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the Ni/GaAs reaction is noticeably impeded in some regions by this intervening layer. In contrast, the Pd/GaAs and Pt/GaAs reactions tend to mechanically disperse the native oxide layers.

142 citations

Patent
06 Jun 1994
TL;DR: In this paper, a video-conferencing system consisting of a camera, a projector, and a screen is presented, where the camera is placed behind and in line with the screen, thus allowing greater viewing reciprocity and eye-contact and projecting a stronger feeling of reality.
Abstract: Our video-conferencing system (10) comprises stations (20, 30) which are remotely located from one another and interconnected by a transmission system (12). Each station includes a camera (23, 33), a projector (21, 31), and a screen (22, 32), which is simultaneously translucent with respect to the projector and transparent with respect to the camera. The projector as well as the camera are placed behind and in line with the screen, thus allowing greater viewing reciprocity and eye-contact and projecting a stronger feeling of reality to the video-conferencing parties. Our screen includes segments which discriminates between projected light and light to be captured by the camera based upon polarization or angle.

142 citations

Patent
12 May 1994
TL;DR: In this paper, a hybrid system combines the high intra-cell capacity of TDMA with the inter-cell and multipath interference rejection capabilities of CDMA, where TDMA is used inside each cell and CDMA signals, having low cross-correlations, are assigned to adjacent cells.
Abstract: In a cellular network, a multiple-access methodology and concomitant circuitry in which TDMA is used inside each cell and CDMA signals, having pulse shapes with low cross-correlations, are assigned to adjacent cells. For example, these pulses could be Direct-Sequence Spread-Spectrum pulses. Such a hybrid system combines the high intra-cell capacity of TDMA with the inter-cell and multipath interference rejection capabilities of CDMA.

142 citations

Journal ArticleDOI
TL;DR: A number of nonequilibrium techniques have been developed for the growth of epitaxial semiconductors, insulators, and metals which have led to new classes of artificially structured materials as discussed by the authors.
Abstract: During the past decade, nonequilibrium techniques have been developed for the growth of epitaxial semiconductors, insulators, and metals which have led to new classes of artificially structured materials. Structures can now be grown which present the materials scientist with systems that exhibit new properties and demonstrate new physical concepts. For example, quantum-well structures with molecular dimensions give rise to new phenomena resulting from quantum mechanical effects. Layered structures with periodicity of a few atomic layers result in coherent behavior for long-range interactions such as magnetism in metallic systems. Metastable structures can be generated which possess important properties not present in equilibrium systems. Studies of these materials are leading to significant advances in our basic understanding of the physics of materials as well as to important new technologies. Despite the rate of progress and the large number of laboratories throughout the world with active programs in various aspects of epitaxial growth, our current understanding of the processes which control growth at a fundamental, atomic level is remarkably primitive. Much of the work to date has been driven by the motivation to produce high quality materials for high performance electronic devices. As a result, most of the effort in epitaxial materials hasmore » concentrated on semiconductors, particularly GaAs and related compounds.« less

141 citations


Authors

Showing all 3097 results

NameH-indexPapersCitations
Joseph E. Stiglitz1641142152469
Pete Smith1562464138819
Jean-Marie Tarascon136853137673
Ramamoorthy Ramesh12264967418
Martin Vetterli10576157825
Noga Alon10489544575
Amit P. Sheth10175342655
Harold G. Craighead10156940357
Susan T. Dumais10034660206
Andrzej Cichocki9795241471
Robert E. Kraut9729738116
Kishor S. Trivedi9569836816
David R. Clarke9055336039
Axel Scherer9073643939
Michael R. Lyu8969633257
Network Information
Related Institutions (5)
Alcatel-Lucent
53.3K papers, 1.4M citations

88% related

Bell Labs
59.8K papers, 3.1M citations

87% related

IBM
253.9K papers, 7.4M citations

83% related

Hewlett-Packard
59.8K papers, 1.4M citations

82% related

Eindhoven University of Technology
52.9K papers, 1.5M citations

81% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20191
20182
20171
20161
20151
20143