Wright-Patterson Air Force Base

About: Wright-Patterson Air Force Base is a other organization based out in Wright-Patterson AFB, Ohio, United States. It is known for research contribution in the topics: Laser & Microstructure. The organization has 5817 authors who have published 9157 publications receiving 292559 citations. The organization is also known as: Wright-Patterson AFB & FFO.

Chiral nanoparticle assemblies: circular dichroism, plasmonic interactions, and exciton effects

Abstract: The paper reviews recent progress on chiral nanocrystal assemblies with induced optical chirality and related circular dichroism. Many natural molecules and biomolecules are chiral and exhibit remarkably strong optical chirality (circular dichroism) due to their amazingly uniform atomic composition in a large ensemble. It is challenging to realize artificial nanoscale systems with optical chirality since the atomic structure of artificial nanostructures may not be always controlled or even known. Nevertheless, the artificial optical chirality has been accomplished and it is the main scope of this review. In particular, we discuss assemblies incorporating chiral molecules, metal nanocrystals, and semiconductor quantum dots. Plasmon-induced and plasmon-enhanced circular dichroism effects appear in nanoscale assemblies built with metal nanocrystals, while excitonic and surface-states related phenomena are observed in semiconductor quantum dots conjugated with chiral molecules.

Life Prediction Methodology for Composite Structures. Part I--Constant Amplitude and Two-Stress Level Fatigue

Abstract: A strength-based wearout model is presented for predicting the residual strength and life of composite structures subjected to constant amplitude or two-stress level fatigue loadings. It is assumed...

Inorganic oxide core, polymer shell nanocomposite as a high K gate dielectric for flexible electronics applications.

Abstract: Organic/inorganic core shell nanoparticles have been synthesized using high K TiO2 as the core nanoparticle, and polystyrene as the shell. This material is easy to process and forms transparent continuous thin films, which exhibit a dielectric constant enhancement of over 3 times that of bulk polystyrene. This new dielectric material has been incorporated into capacitors and thin film transistors (TFTs). Mobilities approaching 0.2 cm2/V·s have been measured for pentacene TFTs incorporating the new TiO2 polystyrene nanostructured gate dielectric, indicating good surface properties for pentacene film growth. This novel strategy for generating high K flexible gate dielectrics will be of value in improving organic and flexible electronic device performance.