Wright-Patterson Air Force Base

About: Wright-Patterson Air Force Base is a other organization based out in Wright-Patterson AFB, Ohio, United States. It is known for research contribution in the topics: Laser & Microstructure. The organization has 5817 authors who have published 9157 publications receiving 292559 citations. The organization is also known as: Wright-Patterson AFB & FFO.

Investigation of the flow structure around a rapidly pitching airfoil

Abstract: A numerical study is presented for unsteady laminar flow past a NACA 0015 airfoil that is pitched, at a nominally constant rate, from zero incidence to a very high angle of attack. The flowfield simulation is obtained by solving the full two-dimensional compressible Navier-Stokes equations on a moving grid employing an implicit approximate-factorization algorithm. An evaluation of the accuracy of the computed solutions is presented, and the numerical results are shown to be of sufficient quality to merit physical interpretation. The highly unsteady flowfield structure is described and is found to be in qualitative agreement with available experimental observations. A discussion is provided for the effects of pitch rate and pitch axis location on the induced vortical structures and on the airfoil aerodynamic forces.

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Abstract: We demonstrate a $\beta $ -Ga2O3 MOSFET with record-high transconductance ( ${g}_{m}$ ) of 21 mS/mm and extrinsic cutoff frequency ( ${f}_{T}$ ) and maximum oscillating frequency ( ${f}_{\max }$ ) of 3.3 and 12.9 GHz, respectively, enabled by implementing a new highly doped ohmic cap layer with a sub-micron gate recess process. RF performance was further verified by CW Class-A power measurements with passive source and load tuning at 800 MHz, resulting in ${P}_{{OUT}}$ , power gain, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%, respectively. These preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using $\beta $ -Ga2O3.